TY - JOUR
T1 - Unexpected and enhanced electrostatic adsorption capacity of oxygen vacancy-rich cobalt-doped In2O3 for high-sensitive MEMS toluene sensor
AU - Wang, Tianshuang
AU - Liu, Siyu
AU - Sun, Peng
AU - Wang, Yanchao
AU - Shimanoe, Kengo
AU - Lu, Geyu
N1 - Funding Information:
This work is supported by the National Nature Science Foundation of China (Grant Number 61722305 , 61833006 , 61831011 and 61520106003 ). The National Postdoctoral Program for Innovative Talents (Grant Number BX20200149 ).
Publisher Copyright:
© 2021
PY - 2021/9/1
Y1 - 2021/9/1
N2 - Semiconductor metal oxide (SMO) gas sensor has been widely researched in artificial olfactory for monitoring gases and odor. However, realizing the characteristics of low detection limit, immunity from interference capacity and low operating temperature still remains challenge. Herein, the synthesis of hollow-porous cobalt-doped In2O3 sensing material with abundant surface oxygen vacancy (SOV) via one-pot and in-situ doping approach is reported. With their rich active sites, the Co-In2O3 exhibits unexpected and high electrostatic adsorption of toluene at 175 °C, which obviously inducing the charge carrier transport. Accordingly, the final Microelectro Mechanical Systems (MEMS) based Co-In2O3 gas sensor exhibits excellent selectivity and response, and toluene detection limits as low as 100 ppb at the lowest temperature so far. Density functional theory (DFT) calculations elucidated that the enhanced electrostatic adsorption is ascribed to the toluene preferentially bound to O3c atom site (bridging oxygen atom near SOV) on Co-In_b-D4 (110) surface, which will induce charge carrier accumulation layer and cause temperature-dependent abnormal pseudo p-type response. This work points out that the electrostatic adsorption derived from SOV could obviously modulate SMO sensing properties, and further supplements the defect engineering.
AB - Semiconductor metal oxide (SMO) gas sensor has been widely researched in artificial olfactory for monitoring gases and odor. However, realizing the characteristics of low detection limit, immunity from interference capacity and low operating temperature still remains challenge. Herein, the synthesis of hollow-porous cobalt-doped In2O3 sensing material with abundant surface oxygen vacancy (SOV) via one-pot and in-situ doping approach is reported. With their rich active sites, the Co-In2O3 exhibits unexpected and high electrostatic adsorption of toluene at 175 °C, which obviously inducing the charge carrier transport. Accordingly, the final Microelectro Mechanical Systems (MEMS) based Co-In2O3 gas sensor exhibits excellent selectivity and response, and toluene detection limits as low as 100 ppb at the lowest temperature so far. Density functional theory (DFT) calculations elucidated that the enhanced electrostatic adsorption is ascribed to the toluene preferentially bound to O3c atom site (bridging oxygen atom near SOV) on Co-In_b-D4 (110) surface, which will induce charge carrier accumulation layer and cause temperature-dependent abnormal pseudo p-type response. This work points out that the electrostatic adsorption derived from SOV could obviously modulate SMO sensing properties, and further supplements the defect engineering.
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U2 - 10.1016/j.snb.2021.129949
DO - 10.1016/j.snb.2021.129949
M3 - Article
AN - SCOPUS:85107636022
SN - 0925-4005
VL - 342
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
M1 - 129949
ER -