@inproceedings{639c1b1e599543d6bad98e2569371e9f,
title = "Underlayer selection to improve the performance of polycrystalline Ge thin film transistors",
abstract = "We fabricated accumulation-mode metal source/drain p-channel thin film transistors using solid-phase crystallized Ge with different thickness formed on glass substrate. By thinning the Ge layer with the largest grain size (3.7 μm), the channel region got fully-depleted, and the TFT exhibited both high on/off current ratio (~102) and field effect mobility (170 cm2 V-1 s-1). We prepared interfacial layers (GeO2 and Al2O3) between Ge and the substrate to achieve a high Hall hole mobility with a thin film, which is the key for improving TFT characteristics. As a result, inserting Al2O3 underlayer improved the electrical properties of thin Ge (50 nm) layers.",
author = "Toshifumi Imajo and Kenta Moto and Keisuke Yamamoto and Takashi Suemasu and Hiroshi Nakashima and Kaoru Toko",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",
year = "2020",
doi = "10.1149/09805.0423ecst",
language = "English",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "5",
pages = "423--427",
editor = "Q. Liu and Hartmann, {J. M.} and Holt, {J. R.} and X. Gong and V. Jain and G. Niu and G. Masini and A. Ogura and S. Miyazaki and M. Ostling and W. Bi and A. Schulze and A. Mai",
booktitle = "PRiME 2020",
address = "United Kingdom",
edition = "5",
}