Unconventional carrier generation mechanism at ferroelectric phase transitions

D. Matsumoto; S. Kaku; K. Nakamura; Y. Watanabe

doi:10.1080/00150193.2010.505461

Unconventional carrier generation mechanism at ferroelectric phase transitions

D. Matsumoto, S. Kaku, K. Nakamura, Y. Watanabe

Condensed Matter Physics

Research output: Contribution to journal › Article › peer-review

Abstract

By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below T_C exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.

Original language	English
Pages (from-to)	29-34
Number of pages	6
Journal	Ferroelectrics
Volume	400
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.505461
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150193.2010.505461

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abstract = "By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below TC exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.",

author = "D. Matsumoto and S. Kaku and K. Nakamura and Y. Watanabe",

note = "Funding Information: D. Matsumoto is supported by the JSPS Research Fellowship for Young Scientists (20·5116).",

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AU - Kaku, S.

AU - Nakamura, K.

AU - Watanabe, Y.

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AB - By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below TC exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.

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Unconventional carrier generation mechanism at ferroelectric phase transitions

Abstract

All Science Journal Classification (ASJC) codes

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