TY - JOUR
T1 - Ultraviolet detectors based on (GaIn)2O3 films
AU - Zhang, Fabi
AU - Li, Haiou
AU - Arita, Makoto
AU - Guo, Qixin
N1 - Funding Information:
National Natural Science Foundation of China (61764001, 61474031); Guangxi Key Laboratory of Precision Navigation Technology and Application (DH201701); Guangxi District Education Office projects to enhance the basic ability of young teachers (2017KY0201); Japan Society for Promotion of Science (JSPS) (KAKENHI Grant Numbers 16K06268 and 26630297). This work was mainly performed in Saga University and the Kyushu University Cleanroom Laboratory Facility supported by the Ministry of Education, Culture, Sports, Science and Technology.
Publisher Copyright:
© 2017 Optical Society of America.
PY - 2017
Y1 - 2017
N2 - We demonstrated a (GaIn)2O3 films based UV photodetector with a planar photoconductor structure, and investigated the photoresponse properties of the fabricated devices. The (GaIn)2O3 films are of ohmic contact with a Au/Ti electrode. The fabricated photodetectors show relatively high photoresponsivity of more than 0.1 A/W. The turn-on wavelength of the photodetectors varied from 285 to 315 nm with the increase of the indium content from 0.25 to 0.49. The properties of the films were also further investigated. The films are of a (-201) oriented monoclinic phase with a high transmittance of more than 90% in the visible region and smooth surfaces without phase separation. The absorption edges of the films shift toward a longer UV wavelength region with the increase of indium content. The above results suggest that wavelength selective UV detectors can be realized based on these films.
AB - We demonstrated a (GaIn)2O3 films based UV photodetector with a planar photoconductor structure, and investigated the photoresponse properties of the fabricated devices. The (GaIn)2O3 films are of ohmic contact with a Au/Ti electrode. The fabricated photodetectors show relatively high photoresponsivity of more than 0.1 A/W. The turn-on wavelength of the photodetectors varied from 285 to 315 nm with the increase of the indium content from 0.25 to 0.49. The properties of the films were also further investigated. The films are of a (-201) oriented monoclinic phase with a high transmittance of more than 90% in the visible region and smooth surfaces without phase separation. The absorption edges of the films shift toward a longer UV wavelength region with the increase of indium content. The above results suggest that wavelength selective UV detectors can be realized based on these films.
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U2 - 10.1364/OME.7.003769
DO - 10.1364/OME.7.003769
M3 - Article
AN - SCOPUS:85030175832
SN - 2159-3930
VL - 7
JO - Optical Materials Express
JF - Optical Materials Express
IS - 10
M1 - 305235
ER -