Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)

Johji Nishio, Chiharu Ota, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa, Hiromichi Ohashi

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).

Original languageEnglish
Pages (from-to)1954-1960
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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