TY - JOUR
T1 - Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)
AU - Nishio, Johji
AU - Ota, Chiharu
AU - Hatakeyama, Tetsuo
AU - Shinohe, Takashi
AU - Kojima, Kazutoshi
AU - Nishizawa, Shin Ichi
AU - Ohashi, Hiromichi
N1 - Funding Information:
This work was performed based on a consignment contract of the New Energy and Industrial Technology Development Organization (NEDO) as a part of R&D in advanced energy-saving technology subsidized by the Ministry of Economy, Trade and Industry.
PY - 2008
Y1 - 2008
N2 - We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).
AB - We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).
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U2 - 10.1109/TED.2008.926666
DO - 10.1109/TED.2008.926666
M3 - Article
AN - SCOPUS:49249094343
SN - 0018-9383
VL - 55
SP - 1954
EP - 1960
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
ER -