Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

Kiyoto Takahata; Yoshifumi Muramoto; Hideki Fukano; Kazutoshi Kato; Atsuo Kozen; Shunji Kimura; Yuhki Imai; Yutaka Miyamoto; Osaake Nakajima; Yutaka Matsuoka

doi:10.1109/2944.826870

Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

Kiyoto Takahata, Yoshifumi Muramoto, Hideki Fukano, Kazutoshi Kato, Atsuo Kozen, Shunji Kimura, Yuhki Imai, Yutaka Miyamoto, Osaake Nakajima, Yutaka Matsuoka

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies f_T/f_max of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

Original language	English
Pages (from-to)	31-37
Number of pages	7
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/2944.826870
Publication status	Published - Jan 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/2944.826870

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title = "Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier",

abstract = "A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.",

author = "Kiyoto Takahata and Yoshifumi Muramoto and Hideki Fukano and Kazutoshi Kato and Atsuo Kozen and Shunji Kimura and Yuhki Imai and Yutaka Miyamoto and Osaake Nakajima and Yutaka Matsuoka",

year = "2000",

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doi = "10.1109/2944.826870",

language = "English",

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AU - Takahata, Kiyoto

AU - Muramoto, Yoshifumi

AU - Fukano, Hideki

AU - Kato, Kazutoshi

AU - Kozen, Atsuo

AU - Kimura, Shunji

AU - Imai, Yuhki

AU - Miyamoto, Yutaka

AU - Nakajima, Osaake

AU - Matsuoka, Yutaka

PY - 2000/1

Y1 - 2000/1

N2 - A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

AB - A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband amplifier consisting of high-electron mobility transistors (HEMT's) were monolithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The distributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5-μm gate-length HEMT's have modest cutoff frequencies fT/fmax of 47/100 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46.5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-μm wavelength. The module achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear eye-opening at 50 Gb/s.

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Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

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