@inproceedings{f2accb18dbba4208b944571e86bad731,
title = "Ultra-low temperature Si TFTs with metal source-drain using ELA for flexible sheet",
abstract = "n-type top-gate TFT was fabricated using ELA without adopting ion-implantation by adopting ultra-low temperature process below 200 'C. In place of impurity doping, Ti of metal was used for source-drain region. As a result of hydrogen annealing at 200'C after forming AI electrodes, drastic improvement of n-type TFT has been realized.",
author = "Taisel Harada and Futa Gakiya and Yuya Lshiki and Tatsuya Okada and Noguchi, {Takash I.} and Noda, {Kanj I.} and Akira Suwa and Hiroshi Ikenoue",
note = "Publisher Copyright: {\textcopyright} 2016 The Society for Information Display.; 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 ; Conference date: 07-12-2016 Through 09-12-2016",
year = "2016",
language = "English",
series = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
publisher = "Society for Information Display",
pages = "955--956",
booktitle = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
address = "United States",
}