TY - GEN
T1 - Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding
AU - Matsumura, R.
AU - Moto, K.
AU - Kai, Y.
AU - Sadoh, T.
AU - Ikenoue, H.
AU - Miyao, M.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Solid-phase crystallization (SPC) of amorphous-GeSn (a-GeSn) films on insulating substrates has been developed combining with laser-anneal seeding, to realize next generation thin-film devices. By this technique, we have realized crystallization of GeSn (>10%) at low temperatures (∼180°C), which is applicable to flexible thin-film devices on low cost plastic substrates with low softening temperatures (∼200°C). In addition, the starting point of crystallization can be controlled by seeding, which is a big advantage in circuit designing.
AB - Solid-phase crystallization (SPC) of amorphous-GeSn (a-GeSn) films on insulating substrates has been developed combining with laser-anneal seeding, to realize next generation thin-film devices. By this technique, we have realized crystallization of GeSn (>10%) at low temperatures (∼180°C), which is applicable to flexible thin-film devices on low cost plastic substrates with low softening temperatures (∼200°C). In addition, the starting point of crystallization can be controlled by seeding, which is a big advantage in circuit designing.
UR - http://www.scopus.com/inward/record.url?scp=84946031205&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946031205&partnerID=8YFLogxK
U2 - 10.1149/06905.0301ecst
DO - 10.1149/06905.0301ecst
M3 - Conference contribution
AN - SCOPUS:84946031205
T3 - ECS Transactions
SP - 301
EP - 304
BT - Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
A2 - Kar, S.
A2 - Kita, K.
A2 - Landheer, D.
A2 - Misra, D.
PB - Electrochemical Society Inc.
T2 - Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
Y2 - 11 October 2015 through 15 October 2015
ER -