TY - JOUR
T1 - Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method
AU - Song, Yi
AU - Mohseni, Parsian K.
AU - Kim, Seung Hyun
AU - Shin, Jae Cheol
AU - Ishihara, Tatsumi
AU - Adesida, Ilesanmi
AU - Li, Xiuling
N1 - Funding Information:
This work was supported in part by the National Science Foundation through the Civil, Mechanical and Manufacturing Innovation under Grant 14-62946 and in part by the International Institute for Carbon-Neutral Energy Research and a gift from Lam Research Corporation.
Publisher Copyright:
© 2016 IEEE.
PY - 2016/8
Y1 - 2016/8
N2 - Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105).
AB - Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105).
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U2 - 10.1109/LED.2016.2577046
DO - 10.1109/LED.2016.2577046
M3 - Article
AN - SCOPUS:84980378076
SN - 0741-3106
VL - 37
SP - 970
EP - 973
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 8
M1 - 7485851
ER -