Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Yi Song, Parsian K. Mohseni, Seung Hyun Kim, Jae Cheol Shin, Tatsumi Ishihara, Ilesanmi Adesida, Xiuling Li

    Research output: Contribution to journalArticlepeer-review

    29 Citations (Scopus)


    Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105).

    Original languageEnglish
    Article number7485851
    Pages (from-to)970-973
    Number of pages4
    JournalIEEE Electron Device Letters
    Issue number8
    Publication statusPublished - Aug 2016

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering


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