TY - JOUR
T1 - Ultra-fast perovskite electro-optic modulator and multi-band transmission up to 300 Gbit s−1
AU - Mao, Jiawei
AU - Uemura, Futa
AU - Yazdani, Sahar Alasvand
AU - Yin, Yuexin
AU - Sato, Hiromu
AU - Lu, Guo Wei
AU - Yokoyama, Shiyoshi
N1 - Publisher Copyright:
© The Author(s) 2024.
PY - 2024/12
Y1 - 2024/12
N2 - The gap between the performance of optoelectronic components and the demands of fiber-optic communications has narrowed significantly in recent decades. Yet, the expansion of data communications traffic remains substantial, with fiber-link speeds increases anticipated in the near future. Here, we demonstrate an ultra-high-speed electro-optic waveguide modulator constructed using a thin film of lanthanum-modified lead zirconate titanate with a ferroelectric phase exhibiting a strong Pockels effect. The modulator has a wide optical window; thus, the modulation was demonstrated for 1550 and 1310 nm wavelengths. This device showed electro-optical intensity signaling with line rates of 172 Gbit s−1, in conjunction with on–off keying modulation; this performance could be increased to 304 Gbit s−1 using four-level pulse modulation. The signaling performance of this modulator was found to be robust, with stable performance at temperatures as high as 100 °C. This technology is expected to have applications in a wide range of classical optoelectronic devices and in quantum science and technology.
AB - The gap between the performance of optoelectronic components and the demands of fiber-optic communications has narrowed significantly in recent decades. Yet, the expansion of data communications traffic remains substantial, with fiber-link speeds increases anticipated in the near future. Here, we demonstrate an ultra-high-speed electro-optic waveguide modulator constructed using a thin film of lanthanum-modified lead zirconate titanate with a ferroelectric phase exhibiting a strong Pockels effect. The modulator has a wide optical window; thus, the modulation was demonstrated for 1550 and 1310 nm wavelengths. This device showed electro-optical intensity signaling with line rates of 172 Gbit s−1, in conjunction with on–off keying modulation; this performance could be increased to 304 Gbit s−1 using four-level pulse modulation. The signaling performance of this modulator was found to be robust, with stable performance at temperatures as high as 100 °C. This technology is expected to have applications in a wide range of classical optoelectronic devices and in quantum science and technology.
UR - https://www.scopus.com/pages/publications/85197268405
UR - https://www.scopus.com/pages/publications/85197268405#tab=citedBy
U2 - 10.1038/s43246-024-00558-5
DO - 10.1038/s43246-024-00558-5
M3 - Article
AN - SCOPUS:85197268405
SN - 2662-4443
VL - 5
JO - Communications Materials
JF - Communications Materials
IS - 1
M1 - 114
ER -