TY - GEN
T1 - UIS withstanding capability and mechanism of high voltage GaN-HEMTs
AU - Naka, Toshiyuki
AU - Saito, Wataru
PY - 2016/7/25
Y1 - 2016/7/25
N2 - This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate voltage at off-state and the substrate connection. The relation between the UIS withstanding capability and the electrical potential at gate and substrate is discussed by the results of the UIS test for GaN-HEMTs with p-type gate structure. Conclusively, the mechanism of UIS for the GaN-HEMT was clarified.
AB - This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate voltage at off-state and the substrate connection. The relation between the UIS withstanding capability and the electrical potential at gate and substrate is discussed by the results of the UIS test for GaN-HEMTs with p-type gate structure. Conclusively, the mechanism of UIS for the GaN-HEMT was clarified.
UR - http://www.scopus.com/inward/record.url?scp=84982124666&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84982124666&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2016.7520827
DO - 10.1109/ISPSD.2016.7520827
M3 - Conference contribution
AN - SCOPUS:84982124666
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 259
EP - 262
BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Y2 - 12 June 2016 through 16 June 2016
ER -