Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si:H films deposited by plasma CVD

William Makoto Nakamura; Hiroomi Miyahara; Hiroshi Sato; Hidefumi Matsuzaki; Kazunori Koga; Masaharu Shiratani

doi:10.1109/TPS.2008.923830

Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si:H films deposited by plasma CVD

William Makoto Nakamura
, Hiroomi Miyahara
, Hiroshi Sato
, Hidefumi Matsuzaki
, Kazunori Koga
, Masaharu Shiratani

Electronic Devices

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Using an optical-scanning method, we obtained 2-D spatial profile of deposition rate of hydrogenated amorphous silicon (a-Si:H) films deposited by a multihollow discharge plasma CVD with a high spatial resolution. From the profile, we deduced 2-D spatial profile of the volume fraction of nanoparticles incorporated into films, since nanoparticles affect optical and electronic properties of a-Si:H films.

Original language	English
Pages (from-to)	888-889
Number of pages	2
Journal	IEEE Transactions on Plasma Science
Volume	36
Issue number	4 PART 1
DOIs	https://doi.org/10.1109/TPS.2008.923830
Publication status	Published - Aug 2008

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Condensed Matter Physics

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10.1109/TPS.2008.923830

Cite this

@article{58e9bdf397ed4e019dfa40e37ac00add,

title = "Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si:H films deposited by plasma CVD",

abstract = "Using an optical-scanning method, we obtained 2-D spatial profile of deposition rate of hydrogenated amorphous silicon (a-Si:H) films deposited by a multihollow discharge plasma CVD with a high spatial resolution. From the profile, we deduced 2-D spatial profile of the volume fraction of nanoparticles incorporated into films, since nanoparticles affect optical and electronic properties of a-Si:H films.",

keywords = "Clusters, Hydrogenated amorphous silicon (a-Si:H), Multi-hollow plasma CVD, Photovoltaic cell materials, Thickness measurements",

author = "Nakamura, \{William Makoto\} and Hiroomi Miyahara and Hiroshi Sato and Hidefumi Matsuzaki and Kazunori Koga and Masaharu Shiratani",

note = "Funding Information: Manuscript received November 30, 2007; revised April 7, 2008. This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO). The authors are with the Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan (e-mail: [email protected]; [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TPS.2008.923830",

year = "2008",

month = aug,

doi = "10.1109/TPS.2008.923830",

language = "English",

volume = "36",

pages = "888--889",

journal = "IEEE Transactions on Plasma Science",

issn = "0093-3813",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4 PART 1",

}

TY - JOUR

T1 - Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si:H films deposited by plasma CVD

AU - Nakamura, William Makoto

AU - Miyahara, Hiroomi

AU - Sato, Hiroshi

AU - Matsuzaki, Hidefumi

AU - Koga, Kazunori

AU - Shiratani, Masaharu

N1 - Funding Information: Manuscript received November 30, 2007; revised April 7, 2008. This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO). The authors are with the Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan (e-mail: [email protected]; [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TPS.2008.923830

PY - 2008/8

Y1 - 2008/8

N2 - Using an optical-scanning method, we obtained 2-D spatial profile of deposition rate of hydrogenated amorphous silicon (a-Si:H) films deposited by a multihollow discharge plasma CVD with a high spatial resolution. From the profile, we deduced 2-D spatial profile of the volume fraction of nanoparticles incorporated into films, since nanoparticles affect optical and electronic properties of a-Si:H films.

AB - Using an optical-scanning method, we obtained 2-D spatial profile of deposition rate of hydrogenated amorphous silicon (a-Si:H) films deposited by a multihollow discharge plasma CVD with a high spatial resolution. From the profile, we deduced 2-D spatial profile of the volume fraction of nanoparticles incorporated into films, since nanoparticles affect optical and electronic properties of a-Si:H films.

KW - Clusters

KW - Hydrogenated amorphous silicon (a-Si:H)

KW - Multi-hollow plasma CVD

KW - Photovoltaic cell materials

KW - Thickness measurements

UR - https://www.scopus.com/pages/publications/50249139217

UR - https://www.scopus.com/pages/publications/50249139217#tab=citedBy

U2 - 10.1109/TPS.2008.923830

DO - 10.1109/TPS.2008.923830

M3 - Article

AN - SCOPUS:50249139217

SN - 0093-3813

VL - 36

SP - 888

EP - 889

JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

IS - 4 PART 1

ER -

Two-dimensional spatial profile of volume fraction of nanoparticles incorporated into a-Si:H films deposited by plasma CVD

Abstract

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All Science Journal Classification (ASJC) codes

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