Tungsten film chemical mechanical polishing using MnO2 slurry

Sadahiro Kishii; Akiyoshi Hatada; Yoshihiro Arimoto; Syuhei Kurokawa; Toshiro K. Doi

doi:10.1143/JJAP.50.076502

Tungsten film chemical mechanical polishing using MnO₂ slurry

Sadahiro Kishii, Akiyoshi Hatada, Yoshihiro Arimoto, Syuhei Kurokawa, Toshiro K. Doi

Manufacturing Process

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4 Citations (Scopus)

Abstract

It has been demonstrated that MnO₂ abrasive can polish tungsten films without using an oxidizer solution. The polishing rate of MnO₂ slurry is 1.5 times higher than that of commercially available Al ₂O₃ slurry. A W plug is formed without etching holes (keyholes) during chemical mechanical polishing with MnO₂ abrasive slurry. With MnO₂ slurry, no key holes were formed even after overpolishing by an additional 0.6 μm. On the other hand, with conventional Al₂O₃ slurry, keyholes were formed after overlpolishing by an additional 0.4-m. The residual MnO₂ abrasive on the surface after chemical mechanical polishing was completely removed by the cleaning process because MnO₂ abrasive easily dissolves in a cleaning solution of HCl, H₂O₂, and H₂O. These results indicate that, since MnO₂ is in itself a solid oxidizer, MnO₂ abrasive can polish W films without using an oxidizer solution and does not etch the seam.

Original language	English
Article number	076502
Journal	Japanese journal of applied physics
Volume	50
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.50.076502
Publication status	Published - Jul 1 2011

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "It has been demonstrated that MnO2 abrasive can polish tungsten films without using an oxidizer solution. The polishing rate of MnO2 slurry is 1.5 times higher than that of commercially available Al 2O3 slurry. A W plug is formed without etching holes (keyholes) during chemical mechanical polishing with MnO2 abrasive slurry. With MnO2 slurry, no key holes were formed even after overpolishing by an additional 0.6 μm. On the other hand, with conventional Al2O3 slurry, keyholes were formed after overlpolishing by an additional 0.4-m. The residual MnO2 abrasive on the surface after chemical mechanical polishing was completely removed by the cleaning process because MnO2 abrasive easily dissolves in a cleaning solution of HCl, H2O2, and H2O. These results indicate that, since MnO2 is in itself a solid oxidizer, MnO2 abrasive can polish W films without using an oxidizer solution and does not etch the seam.",

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AU - Kishii, Sadahiro

AU - Hatada, Akiyoshi

AU - Arimoto, Yoshihiro

AU - Kurokawa, Syuhei

AU - Doi, Toshiro K.

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N2 - It has been demonstrated that MnO2 abrasive can polish tungsten films without using an oxidizer solution. The polishing rate of MnO2 slurry is 1.5 times higher than that of commercially available Al 2O3 slurry. A W plug is formed without etching holes (keyholes) during chemical mechanical polishing with MnO2 abrasive slurry. With MnO2 slurry, no key holes were formed even after overpolishing by an additional 0.6 μm. On the other hand, with conventional Al2O3 slurry, keyholes were formed after overlpolishing by an additional 0.4-m. The residual MnO2 abrasive on the surface after chemical mechanical polishing was completely removed by the cleaning process because MnO2 abrasive easily dissolves in a cleaning solution of HCl, H2O2, and H2O. These results indicate that, since MnO2 is in itself a solid oxidizer, MnO2 abrasive can polish W films without using an oxidizer solution and does not etch the seam.

AB - It has been demonstrated that MnO2 abrasive can polish tungsten films without using an oxidizer solution. The polishing rate of MnO2 slurry is 1.5 times higher than that of commercially available Al 2O3 slurry. A W plug is formed without etching holes (keyholes) during chemical mechanical polishing with MnO2 abrasive slurry. With MnO2 slurry, no key holes were formed even after overpolishing by an additional 0.6 μm. On the other hand, with conventional Al2O3 slurry, keyholes were formed after overlpolishing by an additional 0.4-m. The residual MnO2 abrasive on the surface after chemical mechanical polishing was completely removed by the cleaning process because MnO2 abrasive easily dissolves in a cleaning solution of HCl, H2O2, and H2O. These results indicate that, since MnO2 is in itself a solid oxidizer, MnO2 abrasive can polish W films without using an oxidizer solution and does not etch the seam.

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Tungsten film chemical mechanical polishing using MnO₂ slurry

Abstract

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