Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Ning Han, Fengyun Wang, Jared J. Hou, Sen Po Yip, Hao Lin, Fei Xiu, Ming Fang, Zaixing Yang, Xiaoling Shi, Guofa Dong, Tak Fu Hung, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)


A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.

Original languageEnglish
Pages (from-to)4445-4451
Number of pages7
JournalAdvanced Materials
Issue number32
Publication statusPublished - Aug 27 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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