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Dive into the research topics of 'True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching'. Together they form a unique fingerprint.- Sort by
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Joseph P. Kozak, Ruizhe Zhang, Qihao Song, Jingcun Liu, Wataru Saito, Yuhao Zhang
Research output: Contribution to journal › Article › peer-review