Tritium behavior on SiC

Kazunari Katayama, Masabumi Nishikawa, Toshiharu Takeishi

Research output: Contribution to conferencePaperpeer-review


SiC (silicon carbide) has been considered as one of the primary candidate materials for a first wall component in a future fusion reactor because it has been claimed that SiC has excellent high temperature properties and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, tritium trapping capacity on the surface of SiC is experimentally obtained as about 1010 Bq/m2 at the temperature range of 298 K-1073 K in consideration of the static system effect. It is also observed that tritium is trapped to the surface through hydrogen isotope exchange reaction. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface is quantified at the temperature of 298 K, 773 K, 973 K in consideration of the kinetic system effect by the numerical curve fitting method applying the serial reactor model. The reaction rate is observed to be constant as 3.48 × 10-5m/s. The comparison of tritium properties of SiC with that of graphite or stainless steel is also discussed.

Original languageEnglish
Number of pages4
Publication statusPublished - 2002
Event19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE) - Atlantic City, NJ, United States
Duration: Jan 22 2002Jan 25 2002


Other19th IEEE/NPSS Symposium on Fusion Engineering (19th SOFE)
Country/TerritoryUnited States
CityAtlantic City, NJ

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering


Dive into the research topics of 'Tritium behavior on SiC'. Together they form a unique fingerprint.

Cite this