Tribological behavior of metal CMP and detection of process abnormality

Yohei Yamada; Masanori Kawakubo; Osamu Hirai; Nobuhiro Konishi; Syuhei Kurokawa; Toshiro Doi

doi:10.1149/1.2939214

Tribological behavior of metal CMP and detection of process abnormality

Yohei Yamada, Masanori Kawakubo, Osamu Hirai, Nobuhiro Konishi, Syuhei Kurokawa, Toshiro Doi

Manufacturing Process

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We examined a real-time coefficient of friction (COF) monitoring to evaluate the correlation between the pad surface response during polishing and material removal rate for metal chemical-mechanical polishing (CMP) applications. The results showed that a correlation of the removal rate and COF in tungsten (W) CMP was contrary to that in copper (Cu) CMP. Polishing by-products generated during CMP affects the friction force between the probing tip and the pad surface. The balance between the chemical and mechanical factors indicates the different frictional behavior between W CMP and Cu CMP. Furthermore, we detected the failures in the CMP process, which extracts an out-of-range deviation of the continuously monitored COF in product wafers, and reveal them in tantalum CMP. These results demonstrated the usefulness of an in situ CMP process monitor.

Original language	English
Pages (from-to)	H569-H574
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	8
DOIs	https://doi.org/10.1149/1.2939214
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2939214

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abstract = "We examined a real-time coefficient of friction (COF) monitoring to evaluate the correlation between the pad surface response during polishing and material removal rate for metal chemical-mechanical polishing (CMP) applications. The results showed that a correlation of the removal rate and COF in tungsten (W) CMP was contrary to that in copper (Cu) CMP. Polishing by-products generated during CMP affects the friction force between the probing tip and the pad surface. The balance between the chemical and mechanical factors indicates the different frictional behavior between W CMP and Cu CMP. Furthermore, we detected the failures in the CMP process, which extracts an out-of-range deviation of the continuously monitored COF in product wafers, and reveal them in tantalum CMP. These results demonstrated the usefulness of an in situ CMP process monitor.",

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T1 - Tribological behavior of metal CMP and detection of process abnormality

AU - Yamada, Yohei

AU - Kawakubo, Masanori

AU - Hirai, Osamu

AU - Konishi, Nobuhiro

AU - Kurokawa, Syuhei

AU - Doi, Toshiro

PY - 2008

Y1 - 2008

N2 - We examined a real-time coefficient of friction (COF) monitoring to evaluate the correlation between the pad surface response during polishing and material removal rate for metal chemical-mechanical polishing (CMP) applications. The results showed that a correlation of the removal rate and COF in tungsten (W) CMP was contrary to that in copper (Cu) CMP. Polishing by-products generated during CMP affects the friction force between the probing tip and the pad surface. The balance between the chemical and mechanical factors indicates the different frictional behavior between W CMP and Cu CMP. Furthermore, we detected the failures in the CMP process, which extracts an out-of-range deviation of the continuously monitored COF in product wafers, and reveal them in tantalum CMP. These results demonstrated the usefulness of an in situ CMP process monitor.

AB - We examined a real-time coefficient of friction (COF) monitoring to evaluate the correlation between the pad surface response during polishing and material removal rate for metal chemical-mechanical polishing (CMP) applications. The results showed that a correlation of the removal rate and COF in tungsten (W) CMP was contrary to that in copper (Cu) CMP. Polishing by-products generated during CMP affects the friction force between the probing tip and the pad surface. The balance between the chemical and mechanical factors indicates the different frictional behavior between W CMP and Cu CMP. Furthermore, we detected the failures in the CMP process, which extracts an out-of-range deviation of the continuously monitored COF in product wafers, and reveal them in tantalum CMP. These results demonstrated the usefulness of an in situ CMP process monitor.

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Tribological behavior of metal CMP and detection of process abnormality

Abstract

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