Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

Masaru Itakura; Daigo Norizumi; Tomohisa Ohta; Yoshitsugu Tomokiyo; Noriyuki Kuwano

doi:10.1016/j.tsf.2004.02.084

Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi₂/Si(001) films

Masaru Itakura
, Daigo Norizumi
, Tomohisa Ohta
, Yoshitsugu Tomokiyo
, Noriyuki Kuwano

Materials Physics and Engineering

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

The crystallographic orientation relationships and the formation process of β-FeSi₂/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi₂ particles. The crystallographic relationships obtained are: (112) _α∥(111)_Si and (101)_β∥(111) _Si or (110)_β∥(111)_Si. The grains of α- and β-FeSi₂ grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi₂ grains and some grains of β-FeSi₂ with (100)_β∥(001) _Si [010]_β∥[110]_Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi₂ and promote the formation of β-FeSi₂ on/below the substrate surface.

Original language	English
Pages (from-to)	120-125
Number of pages	6
Journal	Thin Solid Films
Volume	461
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2004.02.084
Publication status	Published - Aug 2 2004
Event	Proceedings of Symposium on Semiconducting Silicides - Yokohama, Japan Duration: Oct 8 2003 → Oct 13 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.02.084

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title = "Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films",

abstract = "The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.",

author = "Masaru Itakura and Daigo Norizumi and Tomohisa Ohta and Yoshitsugu Tomokiyo and Noriyuki Kuwano",

note = "Funding Information: The authors would like to thank Prof. T. Yoshitake of Kyushu University for technical support and valuable comments. We also would like to express thanks to Prof. Y. Maeda of Kyoto University for useful discussion. The present work was partly supported by Grant-in-Aid for Exploratory Research (Nos. 13875008 and 14655232) from the Japan Society for the Promotion of Science.; Proceedings of Symposium on Semiconducting Silicides ; Conference date: 08-10-2003 Through 13-10-2003",

year = "2004",

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doi = "10.1016/j.tsf.2004.02.084",

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T1 - Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

AU - Itakura, Masaru

AU - Norizumi, Daigo

AU - Ohta, Tomohisa

AU - Tomokiyo, Yoshitsugu

AU - Kuwano, Noriyuki

N1 - Funding Information: The authors would like to thank Prof. T. Yoshitake of Kyushu University for technical support and valuable comments. We also would like to express thanks to Prof. Y. Maeda of Kyoto University for useful discussion. The present work was partly supported by Grant-in-Aid for Exploratory Research (Nos. 13875008 and 14655232) from the Japan Society for the Promotion of Science.

PY - 2004/8/2

Y1 - 2004/8/2

N2 - The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.

AB - The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.

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DO - 10.1016/j.tsf.2004.02.084

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AN - SCOPUS:2942666073

SN - 0040-6090

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T2 - Proceedings of Symposium on Semiconducting Silicides

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ER -

Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi₂/Si(001) films

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