TY - JOUR
T1 - Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films
AU - Itakura, Masaru
AU - Norizumi, Daigo
AU - Ohta, Tomohisa
AU - Tomokiyo, Yoshitsugu
AU - Kuwano, Noriyuki
N1 - Funding Information:
The authors would like to thank Prof. T. Yoshitake of Kyushu University for technical support and valuable comments. We also would like to express thanks to Prof. Y. Maeda of Kyoto University for useful discussion. The present work was partly supported by Grant-in-Aid for Exploratory Research (Nos. 13875008 and 14655232) from the Japan Society for the Promotion of Science.
PY - 2004/8/2
Y1 - 2004/8/2
N2 - The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.
AB - The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.
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U2 - 10.1016/j.tsf.2004.02.084
DO - 10.1016/j.tsf.2004.02.084
M3 - Conference article
AN - SCOPUS:2942666073
SN - 0040-6090
VL - 461
SP - 120
EP - 125
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1
T2 - Proceedings of Symposium on Semiconducting Silicides
Y2 - 8 October 2003 through 13 October 2003
ER -