Transforming the short-term sensing stimuli to long-term e-skin memory

Fengyuan Liu; William Taube; Nivasan Yogeswaran; Duncan Gregory; Ravinder Dahiya

doi:10.1109/ICSENS.2017.8234187

Transforming the short-term sensing stimuli to long-term e-skin memory

Fengyuan Liu, William Taube, Nivasan Yogeswaran, Duncan Gregory, Ravinder Dahiya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A Tantalum Pentoxide (Ta₂O₅) based resistive nonvolatile memory device with bipolar switching behaviour was developed to demonstrate the new concept of memory in e-skin. The memory device showed stable switching behavior under preprogrammed voltage stimuli after an initial forming process. The memory cell was then integrated with a commercial tactile sensor with a new interface circuit, which enabled the switching of the memory cell through the electrical output from the sensor. This study provides a novel method for handling the transport and storage of large tactile data and will trigger advances towards memorable e-skin.

Original language	English
Title of host publication	IEEE SENSORS 2017 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781509010127
DOIs	https://doi.org/10.1109/ICSENS.2017.8234187
Publication status	Published - Dec 21 2017
Externally published	Yes
Event	16th IEEE SENSORS Conference, ICSENS 2017 - Glasgow, United Kingdom Duration: Oct 30 2017 → Nov 1 2017

Publication series

Name	Proceedings of IEEE Sensors
Volume	2017-December
ISSN (Print)	1930-0395
ISSN (Electronic)	2168-9229

Other

Other	16th IEEE SENSORS Conference, ICSENS 2017
Country/Territory	United Kingdom
City	Glasgow
Period	10/30/17 → 11/1/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ICSENS.2017.8234187

Cite this

Transforming the short-term sensing stimuli to long-term e-skin memory. / Liu, Fengyuan; Taube, William; Yogeswaran, Nivasan et al.
IEEE SENSORS 2017 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-3 (Proceedings of IEEE Sensors; Vol. 2017-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, F, Taube, W, Yogeswaran, N, Gregory, D & Dahiya, R 2017, Transforming the short-term sensing stimuli to long-term e-skin memory. in IEEE SENSORS 2017 - Conference Proceedings. Proceedings of IEEE Sensors, vol. 2017-December, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 16th IEEE SENSORS Conference, ICSENS 2017, Glasgow, United Kingdom, 10/30/17. https://doi.org/10.1109/ICSENS.2017.8234187

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title = "Transforming the short-term sensing stimuli to long-term e-skin memory",

abstract = "A Tantalum Pentoxide (Ta2O5) based resistive nonvolatile memory device with bipolar switching behaviour was developed to demonstrate the new concept of memory in e-skin. The memory device showed stable switching behavior under preprogrammed voltage stimuli after an initial forming process. The memory cell was then integrated with a commercial tactile sensor with a new interface circuit, which enabled the switching of the memory cell through the electrical output from the sensor. This study provides a novel method for handling the transport and storage of large tactile data and will trigger advances towards memorable e-skin.",

author = "Fengyuan Liu and William Taube and Nivasan Yogeswaran and Duncan Gregory and Ravinder Dahiya",

note = "Funding Information: This work is supported EPSRC Engineering Fellowship for Growth – PRINTSKIN (EP/M002527/1). Publisher Copyright: {\textcopyright} 2017 IEEE.; 16th IEEE SENSORS Conference, ICSENS 2017 ; Conference date: 30-10-2017 Through 01-11-2017",

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doi = "10.1109/ICSENS.2017.8234187",

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AU - Dahiya, Ravinder

PY - 2017/12/21

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N2 - A Tantalum Pentoxide (Ta2O5) based resistive nonvolatile memory device with bipolar switching behaviour was developed to demonstrate the new concept of memory in e-skin. The memory device showed stable switching behavior under preprogrammed voltage stimuli after an initial forming process. The memory cell was then integrated with a commercial tactile sensor with a new interface circuit, which enabled the switching of the memory cell through the electrical output from the sensor. This study provides a novel method for handling the transport and storage of large tactile data and will trigger advances towards memorable e-skin.

AB - A Tantalum Pentoxide (Ta2O5) based resistive nonvolatile memory device with bipolar switching behaviour was developed to demonstrate the new concept of memory in e-skin. The memory device showed stable switching behavior under preprogrammed voltage stimuli after an initial forming process. The memory cell was then integrated with a commercial tactile sensor with a new interface circuit, which enabled the switching of the memory cell through the electrical output from the sensor. This study provides a novel method for handling the transport and storage of large tactile data and will trigger advances towards memorable e-skin.

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Transforming the short-term sensing stimuli to long-term e-skin memory

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