Toward the understanding of annealing effects on (GaIn)2O3 films

Fabi Zhang; Hideki Jan; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Takashi Nagaoka; Makoto Arita; Qixin Guo

doi:10.1016/j.tsf.2015.02.003

Toward the understanding of annealing effects on (GaIn)₂O₃ films

Fabi Zhang, Hideki Jan, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Takashi Nagaoka, Makoto Arita, Qixin Guo

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

(GaIn)₂O₃ films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N₂, vacuum, Ar, O₂) and temperatures (700-1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O₂ ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn)₂O₃ films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O₂ ambient also showed high crystal quality, improved optical transmittance, and smooth surface.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Thin Solid Films
Volume	578
DOIs	https://doi.org/10.1016/j.tsf.2015.02.003
Publication status	Published - Mar 2 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.02.003

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title = "Toward the understanding of annealing effects on (GaIn)2O3 films",

abstract = "(GaIn)2O3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N2, vacuum, Ar, O2) and temperatures (700-1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn)2O3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface.",

author = "Fabi Zhang and Hideki Jan and Katsuhiko Saito and Tooru Tanaka and Mitsuhiro Nishio and Takashi Nagaoka and Makoto Arita and Qixin Guo",

note = "Funding Information: This work was partially supported by the Partnership Project for Fundamental Technology Researches of Ministry of Education, Culture, Sports, Science, and Technology , Japan. We are grateful to Doctor Y. Cui for help on data fitting and discussion. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = mar,

day = "2",

doi = "10.1016/j.tsf.2015.02.003",

language = "English",

volume = "578",

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journal = "Thin Solid Films",

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T1 - Toward the understanding of annealing effects on (GaIn)2O3 films

AU - Zhang, Fabi

AU - Jan, Hideki

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Nishio, Mitsuhiro

AU - Nagaoka, Takashi

AU - Arita, Makoto

AU - Guo, Qixin

N1 - Funding Information: This work was partially supported by the Partnership Project for Fundamental Technology Researches of Ministry of Education, Culture, Sports, Science, and Technology , Japan. We are grateful to Doctor Y. Cui for help on data fitting and discussion. Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/3/2

Y1 - 2015/3/2

N2 - (GaIn)2O3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N2, vacuum, Ar, O2) and temperatures (700-1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn)2O3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface.

AB - (GaIn)2O3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N2, vacuum, Ar, O2) and temperatures (700-1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn)2O3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface.

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DO - 10.1016/j.tsf.2015.02.003

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SN - 0040-6090

VL - 578

SP - 1

EP - 6

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Toward the understanding of annealing effects on (GaIn)₂O₃ films

Abstract

All Science Journal Classification (ASJC) codes

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