Top-down approach to align single-walled carbon nanotubes on silicon substrate

Carlo M. Orofeo; Hiroki Ago; Naoki Yoshihara; Masaharu Tsuji

doi:10.1063/1.3078280

Top-down approach to align single-walled carbon nanotubes on silicon substrate

Carlo M. Orofeo, Hiroki Ago, Naoki Yoshihara, Masaharu Tsuji

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We report controlled horizontal alignment of single-walled carbon nanotubes (SWNTs) directly grown on trenched SiO2 /Si substrate. The nanotubes were found to align along the trenches, which were created via electron beam lithography followed by reactive ion etching. From the experimental observations, the alignment mechanism was proposed. Furthermore, field-effect transistors fabricated from these substrates showed acceptable mobility and on/off ratio as high as 104. The method offers the possibility of large-scale integrated SWNT electronics for mass production.

Original language	English
Article number	053113
Journal	Applied Physics Letters
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.3078280
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3078280

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@article{e415fca662e747d9bb15abba193c7b25,

title = "Top-down approach to align single-walled carbon nanotubes on silicon substrate",

abstract = "We report controlled horizontal alignment of single-walled carbon nanotubes (SWNTs) directly grown on trenched SiO2 /Si substrate. The nanotubes were found to align along the trenches, which were created via electron beam lithography followed by reactive ion etching. From the experimental observations, the alignment mechanism was proposed. Furthermore, field-effect transistors fabricated from these substrates showed acceptable mobility and on/off ratio as high as 104. The method offers the possibility of large-scale integrated SWNT electronics for mass production.",

author = "Orofeo, {Carlo M.} and Hiroki Ago and Naoki Yoshihara and Masaharu Tsuji",

note = "Funding Information: The authors acknowledge Professor K. Takahashi and T. Ikuta of Kyushu University for the advice on the EB-RIE processes. This work was supported by Nanoelectronics Project of METI, Grant-in-aid for Scientific Research from MEXT, Industrial Technology Research Program from NEDO, and PRESTO-JST. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

doi = "10.1063/1.3078280",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Top-down approach to align single-walled carbon nanotubes on silicon substrate

AU - Orofeo, Carlo M.

AU - Ago, Hiroki

AU - Yoshihara, Naoki

AU - Tsuji, Masaharu

N1 - Funding Information: The authors acknowledge Professor K. Takahashi and T. Ikuta of Kyushu University for the advice on the EB-RIE processes. This work was supported by Nanoelectronics Project of METI, Grant-in-aid for Scientific Research from MEXT, Industrial Technology Research Program from NEDO, and PRESTO-JST. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009

Y1 - 2009

N2 - We report controlled horizontal alignment of single-walled carbon nanotubes (SWNTs) directly grown on trenched SiO2 /Si substrate. The nanotubes were found to align along the trenches, which were created via electron beam lithography followed by reactive ion etching. From the experimental observations, the alignment mechanism was proposed. Furthermore, field-effect transistors fabricated from these substrates showed acceptable mobility and on/off ratio as high as 104. The method offers the possibility of large-scale integrated SWNT electronics for mass production.

AB - We report controlled horizontal alignment of single-walled carbon nanotubes (SWNTs) directly grown on trenched SiO2 /Si substrate. The nanotubes were found to align along the trenches, which were created via electron beam lithography followed by reactive ion etching. From the experimental observations, the alignment mechanism was proposed. Furthermore, field-effect transistors fabricated from these substrates showed acceptable mobility and on/off ratio as high as 104. The method offers the possibility of large-scale integrated SWNT electronics for mass production.

UR - http://www.scopus.com/inward/record.url?scp=59849114284&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59849114284&partnerID=8YFLogxK

U2 - 10.1063/1.3078280

DO - 10.1063/1.3078280

M3 - Article

AN - SCOPUS:59849114284

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053113

ER -

Top-down approach to align single-walled carbon nanotubes on silicon substrate

Abstract

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