Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers

R. Hattori; T. Enomoto; J. Shirafuji

doi:10.1016/0022-3093(89)90696-0

Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers

R. Hattori, T. Enomoto, J. Shirafuji

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Longitudinal electron transport in a-Si:H/a-SiN_x:H multilayers has been measured by time-of-flight method. The mechanism involved is explained in terms of tunnel hopping of electrons confined in well layers to neighbors through the barrier layers and multiple trapping process in the well layers. Based on this model, the energy distribution of deep lying tail states in the well layers is estimated.

Original language	English
Pages (from-to)	711-713
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	114
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(89)90696-0
Publication status	Published - Dec 2 1989
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(89)90696-0

Cite this

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title = "Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers",

abstract = "Longitudinal electron transport in a-Si:H/a-SiNx:H multilayers has been measured by time-of-flight method. The mechanism involved is explained in terms of tunnel hopping of electrons confined in well layers to neighbors through the barrier layers and multiple trapping process in the well layers. Based on this model, the energy distribution of deep lying tail states in the well layers is estimated.",

author = "R. Hattori and T. Enomoto and J. Shirafuji",

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AU - Hattori, R.

AU - Enomoto, T.

AU - Shirafuji, J.

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Y1 - 1989/12/2

N2 - Longitudinal electron transport in a-Si:H/a-SiNx:H multilayers has been measured by time-of-flight method. The mechanism involved is explained in terms of tunnel hopping of electrons confined in well layers to neighbors through the barrier layers and multiple trapping process in the well layers. Based on this model, the energy distribution of deep lying tail states in the well layers is estimated.

AB - Longitudinal electron transport in a-Si:H/a-SiNx:H multilayers has been measured by time-of-flight method. The mechanism involved is explained in terms of tunnel hopping of electrons confined in well layers to neighbors through the barrier layers and multiple trapping process in the well layers. Based on this model, the energy distribution of deep lying tail states in the well layers is estimated.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

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ER -

Time-of-flight measurement of longitudinal electron transport in amorphous semiconductor multilayers

Abstract

All Science Journal Classification (ASJC) codes

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