Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd3+-substituted bismuth titanate thin films

Hiroshi Uchida; Seiichiro Koda; Hirofumi Matsuda; Takashi Iijima; Takayuki Watanabe; Hiroshi Funakubo

doi:10.1557/proc-784-c11.8

Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd³⁺-substituted bismuth titanate thin films

Hiroshi Uchida
, Seiichiro Koda
, Hirofumi Matsuda
, Takashi Iijima
, Takayuki Watanabe
, Hiroshi Funakubo

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd) ₄Ti₃O₁₂ (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi_3.50Nd_0.50) _1-(x/12)(Ti_3.00-xV_x)O₁₅ (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/SiO₂/(100)Si substrates using a chemical solution deposition (CSD) technique. V⁵⁺-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V⁵⁺-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Original language	English
Pages (from-to)	207-212
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	784
DOIs	https://doi.org/10.1557/proc-784-c11.8
Publication status	Published - 2003
Externally published	Yes
Event	Ferroelectric Thin Films XII - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-784-c11.8

Cite this

@article{ff0e9681666d4895a52f196173d798ff,

title = "Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd3+-substituted bismuth titanate thin films",

abstract = "Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd) 4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50) 1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.",

author = "Hiroshi Uchida and Seiichiro Koda and Hirofumi Matsuda and Takashi Iijima and Takayuki Watanabe and Hiroshi Funakubo",

year = "2003",

doi = "10.1557/proc-784-c11.8",

language = "English",

volume = "784",

pages = "207--212",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Ferroelectric Thin Films XII ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - JOUR

T1 - Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd3+-substituted bismuth titanate thin films

AU - Uchida, Hiroshi

AU - Koda, Seiichiro

AU - Matsuda, Hirofumi

AU - Iijima, Takashi

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

PY - 2003

Y1 - 2003

N2 - Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd) 4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50) 1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

AB - Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd) 4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50) 1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

UR - https://www.scopus.com/pages/publications/2942670647

UR - https://www.scopus.com/pages/publications/2942670647#tab=citedBy

U2 - 10.1557/proc-784-c11.8

DO - 10.1557/proc-784-c11.8

M3 - Conference article

AN - SCOPUS:2942670647

SN - 0272-9172

VL - 784

SP - 207

EP - 212

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films XII

Y2 - 1 December 2003 through 4 December 2003

ER -

Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd³⁺-substituted bismuth titanate thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this