Three-dimensional observation of dislocations by electron tomography in a silicon crystal

Masaki Tanaka; Masaki Honda; Masatoshi Mitsuhara; Satoshi Hata; Kenji Kaneko; Kenji Higashida

doi:10.2320/matertrans.MAW200828

Three-dimensional observation of dislocations by electron tomography in a silicon crystal

Masaki Tanaka, Masaki Honda, Masatoshi Mitsuhara, Satoshi Hata, Kenji Kaneko, Kenji Higashida

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

Original language	English
Pages (from-to)	1953-1956
Number of pages	4
Journal	Materials Transactions
Volume	49
Issue number	9
DOIs	https://doi.org/10.2320/matertrans.MAW200828
Publication status	Published - Sept 2008

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.MAW200828

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@article{8cde9618a2ed43ecaca77f20cb16a352,

title = "Three-dimensional observation of dislocations by electron tomography in a silicon crystal",

abstract = "Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.",

author = "Masaki Tanaka and Masaki Honda and Masatoshi Mitsuhara and Satoshi Hata and Kenji Kaneko and Kenji Higashida",

year = "2008",

month = sep,

doi = "10.2320/matertrans.MAW200828",

language = "English",

volume = "49",

pages = "1953--1956",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "The Japan Institute of Metals and Materials",

number = "9",

}

TY - JOUR

T1 - Three-dimensional observation of dislocations by electron tomography in a silicon crystal

AU - Tanaka, Masaki

AU - Honda, Masaki

AU - Mitsuhara, Masatoshi

AU - Hata, Satoshi

AU - Kaneko, Kenji

AU - Higashida, Kenji

PY - 2008/9

Y1 - 2008/9

N2 - Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

AB - Dislocations in a silicon single crystal introduced by three point-bending at a high temperature were observed by electron tomography in annular dark field-scanning transmission electron microscopy (ADF-STEM). Commercially available P type (001) single crystal wafers were employed. An ADF STEM tilt series was acquired from -60° to +60° in tilt range with 2° in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. The observed dislocations were reconstructed by simultaneous interactive reconstruction technique, exhibiting a 3-D configuration of dislocations introduced by the three-point bending.

UR - http://www.scopus.com/inward/record.url?scp=54549114393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54549114393&partnerID=8YFLogxK

U2 - 10.2320/matertrans.MAW200828

DO - 10.2320/matertrans.MAW200828

M3 - Article

AN - SCOPUS:54549114393

SN - 1345-9678

VL - 49

SP - 1953

EP - 1956

JO - Materials Transactions

JF - Materials Transactions

IS - 9

ER -

Three-dimensional observation of dislocations by electron tomography in a silicon crystal

Abstract

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