Thickness dependent growth kinetics in Ni-mediated crystallization of a-sige on insulator

T. Sadoh; H. Kanno; O. Nakano; A. Kenjo; M. Miyao

Thickness dependent growth kinetics in Ni-mediated crystallization of a-sige on insulator

T. Sadoh, H. Kanno, O. Nakano, A. Kenjo, M. Miyao

Electronic Devices

Research output: Contribution to conference › Paper › peer-review

Abstract

The thickness dependent growth kinetics in Ni-mediated crystallization of a-SiGe on SiO₂ has been investigated. The crystallized area consisted of dendrite and plane regions. The growth velocities of both regions increased with increasing thickness of the starting amorphous films, and the dendrite and plane growth lengths of 120 and 50 urn were obtained for the sample (film thickness: 100 nm) after annealing (550°C, 20 h). This dependence could be explained on the basis of the narrowing of the effective Ni channel in the grown c-SiGe regions with thinning deposited SiGe films. The control of the film thickness is important for optimization of Ni-mediated crystallization process of a-SiGe to realize high quality thin-film transistors.

Original language	English
Pages	143-147
Number of pages	5
Publication status	Published - Dec 1 2004
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

All Science Journal Classification (ASJC) codes

Engineering(all)

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title = "Thickness dependent growth kinetics in Ni-mediated crystallization of a-sige on insulator",

abstract = "The thickness dependent growth kinetics in Ni-mediated crystallization of a-SiGe on SiO2 has been investigated. The crystallized area consisted of dendrite and plane regions. The growth velocities of both regions increased with increasing thickness of the starting amorphous films, and the dendrite and plane growth lengths of 120 and 50 urn were obtained for the sample (film thickness: 100 nm) after annealing (550°C, 20 h). This dependence could be explained on the basis of the narrowing of the effective Ni channel in the grown c-SiGe regions with thinning deposited SiGe films. The control of the film thickness is important for optimization of Ni-mediated crystallization process of a-SiGe to realize high quality thin-film transistors.",

author = "T. Sadoh and H. Kanno and O. Nakano and A. Kenjo and M. Miyao",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "143--147",

note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

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TY - CONF

T1 - Thickness dependent growth kinetics in Ni-mediated crystallization of a-sige on insulator

AU - Sadoh, T.

AU - Kanno, H.

AU - Nakano, O.

AU - Kenjo, A.

AU - Miyao, M.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The thickness dependent growth kinetics in Ni-mediated crystallization of a-SiGe on SiO2 has been investigated. The crystallized area consisted of dendrite and plane regions. The growth velocities of both regions increased with increasing thickness of the starting amorphous films, and the dendrite and plane growth lengths of 120 and 50 urn were obtained for the sample (film thickness: 100 nm) after annealing (550°C, 20 h). This dependence could be explained on the basis of the narrowing of the effective Ni channel in the grown c-SiGe regions with thinning deposited SiGe films. The control of the film thickness is important for optimization of Ni-mediated crystallization process of a-SiGe to realize high quality thin-film transistors.

AB - The thickness dependent growth kinetics in Ni-mediated crystallization of a-SiGe on SiO2 has been investigated. The crystallized area consisted of dendrite and plane regions. The growth velocities of both regions increased with increasing thickness of the starting amorphous films, and the dendrite and plane growth lengths of 120 and 50 urn were obtained for the sample (film thickness: 100 nm) after annealing (550°C, 20 h). This dependence could be explained on the basis of the narrowing of the effective Ni channel in the grown c-SiGe regions with thinning deposited SiGe films. The control of the film thickness is important for optimization of Ni-mediated crystallization process of a-SiGe to realize high quality thin-film transistors.

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M3 - Paper

AN - SCOPUS:17044370471

SP - 143

EP - 147

T2 - SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Thickness dependent growth kinetics in Ni-mediated crystallization of a-sige on insulator

Abstract

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