The thickness dependent growth kinetics in Ni-mediated crystallization of a-SiGe on SiO2 has been investigated. The crystallized area consisted of dendrite and plane regions. The growth velocities of both regions increased with increasing thickness of the starting amorphous films, and the dendrite and plane growth lengths of 120 and 50 urn were obtained for the sample (film thickness: 100 nm) after annealing (550°C, 20 h). This dependence could be explained on the basis of the narrowing of the effective Ni channel in the grown c-SiGe regions with thinning deposited SiGe films. The control of the film thickness is important for optimization of Ni-mediated crystallization process of a-SiGe to realize high quality thin-film transistors.
|Number of pages||5|
|Publication status||Published - Dec 1 2004|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: Oct 3 2004 → Oct 8 2004
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||10/3/04 → 10/8/04|
All Science Journal Classification (ASJC) codes