Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Kenji Takahashi; Muneyasu Suzuki; Takashi Kojima; Takayuki Watanabe; Yukio Sakashita; Kazumi Kato; Osami Sakata; Kazushi Sumitani; Hiroshi Funakubo

doi:10.1063/1.2336626

Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Kenji Takahashi, Muneyasu Suzuki, Takashi Kojima, Takayuki Watanabe, Yukio Sakashita, Kazumi Kato, Osami Sakata, Kazushi Sumitani, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

c-axis-oriented epitaxial SrBi₄Ti₄O₁₅ and CaBi₄Ti₄O₁₅ films having natural superlattice structure were grown on (001)_cSrRuO₃||(001)SrTiO ₃ substrates by metal organic chemical vapor deposition. SrBi ₄Ti₄O₁₅ films suffer no degradation with a dielectric constant of 200 down to a film thickness of 15 nm, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.

Original language	English
Article number	082901
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2336626
Publication status	Published - 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2336626

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@article{aa676e2aa7034b98b1f0cbc2199758ef,

title = "Thickness dependence of dielectric properties in bismuth layer-structured dielectrics",

abstract = "c-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films having natural superlattice structure were grown on (001)cSrRuO3||(001)SrTiO 3 substrates by metal organic chemical vapor deposition. SrBi 4Ti4O15 films suffer no degradation with a dielectric constant of 200 down to a film thickness of 15 nm, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.",

author = "Kenji Takahashi and Muneyasu Suzuki and Takashi Kojima and Takayuki Watanabe and Yukio Sakashita and Kazumi Kato and Osami Sakata and Kazushi Sumitani and Hiroshi Funakubo",

year = "2006",

doi = "10.1063/1.2336626",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

AU - Takahashi, Kenji

AU - Suzuki, Muneyasu

AU - Kojima, Takashi

AU - Watanabe, Takayuki

AU - Sakashita, Yukio

AU - Kato, Kazumi

AU - Sakata, Osami

AU - Sumitani, Kazushi

AU - Funakubo, Hiroshi

PY - 2006

Y1 - 2006

N2 - c-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films having natural superlattice structure were grown on (001)cSrRuO3||(001)SrTiO 3 substrates by metal organic chemical vapor deposition. SrBi 4Ti4O15 films suffer no degradation with a dielectric constant of 200 down to a film thickness of 15 nm, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.

AB - c-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films having natural superlattice structure were grown on (001)cSrRuO3||(001)SrTiO 3 substrates by metal organic chemical vapor deposition. SrBi 4Ti4O15 films suffer no degradation with a dielectric constant of 200 down to a film thickness of 15 nm, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications.

UR - http://www.scopus.com/inward/record.url?scp=33747822850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747822850&partnerID=8YFLogxK

U2 - 10.1063/1.2336626

DO - 10.1063/1.2336626

M3 - Article

AN - SCOPUS:33747822850

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082901

ER -

Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

Abstract

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