Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics

Ahrong Jeong; Koichiro Suekuni; Michitaka Ohtaki; Byung Koog Jang

doi:10.1016/j.ceramint.2021.05.101

Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics

Ahrong Jeong, Koichiro Suekuni, Michitaka Ohtaki, Byung Koog Jang

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn_(1−x−y)Ga_xIn_y]O (x = 0, 0.02; y = 0, 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure and microstructural analyses were conducted to confirm the solubility of the dopants and understand the correlations between the crystallographic phases and the various compositions. It was confirmed that the solubility of Ga (x = 0.02; y = 0.005) was promoted by doping with In and Ga, and the highest power factor of 0.99 mW K⁻² m⁻¹ was acquired at 1046 K. Furthermore, the thermal conductivity at 340–530 K was reduced by doping with In and Ga.

Original language	English
Pages (from-to)	23927-23934
Number of pages	8
Journal	Ceramics International
Volume	47
Issue number	17
DOIs	https://doi.org/10.1016/j.ceramint.2021.05.101
Publication status	Published - Sept 1 2021

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2021.05.101

Cite this

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title = "Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics",

abstract = "In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn(1−x−y)GaxIny]O (x = 0, 0.02; y = 0, 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure and microstructural analyses were conducted to confirm the solubility of the dopants and understand the correlations between the crystallographic phases and the various compositions. It was confirmed that the solubility of Ga (x = 0.02; y = 0.005) was promoted by doping with In and Ga, and the highest power factor of 0.99 mW K−2 m−1 was acquired at 1046 K. Furthermore, the thermal conductivity at 340–530 K was reduced by doping with In and Ga.",

author = "Ahrong Jeong and Koichiro Suekuni and Michitaka Ohtaki and Jang, {Byung Koog}",

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T1 - Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics

AU - Jeong, Ahrong

AU - Suekuni, Koichiro

AU - Ohtaki, Michitaka

AU - Jang, Byung Koog

PY - 2021/9/1

Y1 - 2021/9/1

N2 - In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn(1−x−y)GaxIny]O (x = 0, 0.02; y = 0, 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure and microstructural analyses were conducted to confirm the solubility of the dopants and understand the correlations between the crystallographic phases and the various compositions. It was confirmed that the solubility of Ga (x = 0.02; y = 0.005) was promoted by doping with In and Ga, and the highest power factor of 0.99 mW K−2 m−1 was acquired at 1046 K. Furthermore, the thermal conductivity at 340–530 K was reduced by doping with In and Ga.

AB - In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn(1−x−y)GaxIny]O (x = 0, 0.02; y = 0, 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure and microstructural analyses were conducted to confirm the solubility of the dopants and understand the correlations between the crystallographic phases and the various compositions. It was confirmed that the solubility of Ga (x = 0.02; y = 0.005) was promoted by doping with In and Ga, and the highest power factor of 0.99 mW K−2 m−1 was acquired at 1046 K. Furthermore, the thermal conductivity at 340–530 K was reduced by doping with In and Ga.

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VL - 47

SP - 23927

EP - 23934

JO - Ceramics International

JF - Ceramics International

IS - 17

ER -

Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics

Abstract

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