TY - GEN
T1 - Thermoelectric Properties of Halide Perovskite Thin Films
AU - Watanabe, Kosuke
AU - Miura, Asuka
AU - Yabuki, Tomohide
AU - Miyazaki, Koji
N1 - Publisher Copyright:
© 2023 FTFMD.
PY - 2023
Y1 - 2023
N2 - One-step solution processed Cesium Tin halide perovskites (CsSnI3) known as lead-free halide perovskite were explored for thermoelectric applications. We report thermoelectric properties of CsSnI3 with some dopants, such as In, Sb, Ni, Mg and Cu in different concentrations (50, 100 ppm) to control the carrier concentration. The fabricated thin film shows p-Type characteristics and their power factors were around 100μW/(m2· K) with any dopants in different concentrations. Their properties agreed with ab-initio calculation for CsSnI3 under the constant relaxation time assumption (τ=2×10-14 s). The high electrical conductivity is realized by Sn4+ increase (Sn2+ oxidation) was confirmed by XPS measurements. Thermal conductivity was also measured to be around 0.3 W/(m· K) by differential 3ω method. The printable materials will will help for further development of direct thermal energy harvesting devices near room temperature.
AB - One-step solution processed Cesium Tin halide perovskites (CsSnI3) known as lead-free halide perovskite were explored for thermoelectric applications. We report thermoelectric properties of CsSnI3 with some dopants, such as In, Sb, Ni, Mg and Cu in different concentrations (50, 100 ppm) to control the carrier concentration. The fabricated thin film shows p-Type characteristics and their power factors were around 100μW/(m2· K) with any dopants in different concentrations. Their properties agreed with ab-initio calculation for CsSnI3 under the constant relaxation time assumption (τ=2×10-14 s). The high electrical conductivity is realized by Sn4+ increase (Sn2+ oxidation) was confirmed by XPS measurements. Thermal conductivity was also measured to be around 0.3 W/(m· K) by differential 3ω method. The printable materials will will help for further development of direct thermal energy harvesting devices near room temperature.
UR - http://www.scopus.com/inward/record.url?scp=85175268513&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85175268513&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85175268513
T3 - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings
SP - 75
EP - 77
BT - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023
Y2 - 4 July 2023 through 7 July 2023
ER -