This paper presents the structure and fabrication process of a thermoelectric infrared sensor that provides high responsivity and a low cost potential. The processes for obtaining a precisely patterned Au-black infrared absorbing layer and reducing the internal stress of the Si3N4„ layer deposited by LP-CVD achieve both high responsivity and an excellent time constant A prototype sensor, having external dimensions of 160 µmx 160 µm and six pairs of thermopiles, achieved responsivity of 2100 VAV and a time constant of 25 msec at a pressure of 7.33 Pa. This performance is suitable for automotive appEcations.
All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Electrical and Electronic Engineering