Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE

Yoshihiro Kangawa, Tomonori Ito, Yoshinao Kumagai, Akinori Koukitu

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Thermodynamic analyses were carried out to understand influence of lattice constraint from GaN and InN substrates on relationship between solid composition x of In x Ga 1-x N films and input mole ratio R In (=P In 0 /(P In 0 +P Ga 0 ) where P i 0 is the input partial pressure of element i) during molecular beam epitaxy. The calculated results suggest that compositional unstable region is found at small R In region for InGaN on InN while that for InGaN on GaN can be seen at large R In region at higher temperatures. This implies that InN-rich thin films are possible to form on InN substrate though it is difficult to form on GaN substrate.

Original languageEnglish
Pages (from-to)453-457
Number of pages5
JournalApplied Surface Science
Issue number1-4 SPEC.
Publication statusPublished - Jun 30 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE'. Together they form a unique fingerprint.

Cite this