@inbook{d405f5a33fc44ab1ad0be80560fe063f,
title = "Thermodynamic approach to InN epitaxy",
abstract = "In this chapter, influences of N/III ratio, growth orientation and total pressure on epitaxial growth processes of In(Ga)N are discussed. It is known that N/III ratio is essential parameter to grow In(Ga)N thin films.",
author = "Yoshihiro Kangawa",
note = "Publisher Copyright: {\textcopyright} 2018, Springer International Publishing AG, part of Springer Nature.",
year = "2018",
doi = "10.1007/978-3-319-76641-6\_5",
language = "English",
series = "Springer Series in Materials Science",
publisher = "Springer Verlag",
pages = "95--108",
booktitle = "Springer Series in Materials Science",
address = "Germany",
}