Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge

Kawano Jun, K. Yoshihiro, Ito Tomonori, Kakimoto Koichi, Koukitu Akinori

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper, we use thermodynamic analysis to determine how the nitrogen (N) ratio in the source gases affects the solid composition of coherently grown GaAs1-xNx(x∼0.03). The source gases for Ga, As, and N are trimethylgallium ((CH3)3Ga), arsine (AsH3), and ammonia (NH3), respectively. The growth occurs on a Ge substrate, and the analysis includes the stress from the substratecrystal lattice mismatch. Calculation results indicate that to have just a few percent N incorporation into the grown solid, the V/III ratio in the source gases should be several thousands and the input-gas partial-pressure ratio NH 3/(NH3AsH3) should exceed 0.99. We also find that the lattice mismatch stress from the Ge substrate increases the V/III sourcegas ratio required for stable growth, whereas an increase in input Ga partial pressure ratio has the opposite effect.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - Mar 15 2012

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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