TY - JOUR
T1 - Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy
AU - Sekiguchi, Kazuki
AU - Shirakawa, Hiroki
AU - Chokawa, Kenta
AU - Araidai, Masaaki
AU - Kangawa, Yoshihiro
AU - Kakimoto, Koichi
AU - Shiraishi, Kenji
N1 - Funding Information:
This research is supported by the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT), through its “Program for research and development of next-generation semiconductors to realize an energy-saving society”.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/4
Y1 - 2018/4
N2 - We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent highresolution mass spectroscopy results.
AB - We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent highresolution mass spectroscopy results.
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U2 - 10.7567/JJAP.57.04FJ03
DO - 10.7567/JJAP.57.04FJ03
M3 - Article
AN - SCOPUS:85044462922
SN - 0021-4922
VL - 57
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4
M1 - 04FJ03
ER -