Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

Tomoya Kimura; Kazuki Ohnishi; Yuki Amano; Naoki Fujimoto; Masaaki Araidai; Shugo Nitta; Yoshio Honda; Hiroshi Amano; Yoshihiro Kangawa; Kenji Shiraishi

doi:10.35848/1347-4065/aba0d5

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

Tomoya Kimura, Kazuki Ohnishi, Yuki Amano, Naoki Fujimoto, Masaaki Araidai, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Yoshihiro Kangawa, Kenji Shiraishi

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The halide vapor phase epitaxy (HVPE) of Mg-doped GaN using solid MgO is investigated. Thermodynamic analysis of the reactions amongst MgO, HCl and N2 is performed based on first-principles calculations. It is found that the equilibrium partial pressure of MgCl2 is the highest amongst magnesium related molecules at 900 °C. By increasing the input partial pressure of HCl, the pressure of MgCl2 is increased, which agrees well with recently reported experiments. From these results, it is concluded that MgCl2 is the key molecule which plays the most important role for Mg-doping in fabricating p-type GaN using HVPE with MgO.

Original language	English
Article number	088001
Journal	Japanese journal of applied physics
Volume	59
Issue number	8
DOIs	https://doi.org/10.35848/1347-4065/aba0d5
Publication status	Published - Aug 1 2020

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.35848/1347-4065/aba0d5

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title = "Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO",

abstract = "The halide vapor phase epitaxy (HVPE) of Mg-doped GaN using solid MgO is investigated. Thermodynamic analysis of the reactions amongst MgO, HCl and N2 is performed based on first-principles calculations. It is found that the equilibrium partial pressure of MgCl2 is the highest amongst magnesium related molecules at 900 °C. By increasing the input partial pressure of HCl, the pressure of MgCl2 is increased, which agrees well with recently reported experiments. From these results, it is concluded that MgCl2 is the key molecule which plays the most important role for Mg-doping in fabricating p-type GaN using HVPE with MgO.",

author = "Tomoya Kimura and Kazuki Ohnishi and Yuki Amano and Naoki Fujimoto and Masaaki Araidai and Shugo Nitta and Yoshio Honda and Hiroshi Amano and Yoshihiro Kangawa and Kenji Shiraishi",

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doi = "10.35848/1347-4065/aba0d5",

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T1 - Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

AU - Kimura, Tomoya

AU - Ohnishi, Kazuki

AU - Amano, Yuki

AU - Fujimoto, Naoki

AU - Araidai, Masaaki

AU - Nitta, Shugo

AU - Honda, Yoshio

AU - Amano, Hiroshi

AU - Kangawa, Yoshihiro

AU - Shiraishi, Kenji

PY - 2020/8/1

Y1 - 2020/8/1

N2 - The halide vapor phase epitaxy (HVPE) of Mg-doped GaN using solid MgO is investigated. Thermodynamic analysis of the reactions amongst MgO, HCl and N2 is performed based on first-principles calculations. It is found that the equilibrium partial pressure of MgCl2 is the highest amongst magnesium related molecules at 900 °C. By increasing the input partial pressure of HCl, the pressure of MgCl2 is increased, which agrees well with recently reported experiments. From these results, it is concluded that MgCl2 is the key molecule which plays the most important role for Mg-doping in fabricating p-type GaN using HVPE with MgO.

AB - The halide vapor phase epitaxy (HVPE) of Mg-doped GaN using solid MgO is investigated. Thermodynamic analysis of the reactions amongst MgO, HCl and N2 is performed based on first-principles calculations. It is found that the equilibrium partial pressure of MgCl2 is the highest amongst magnesium related molecules at 900 °C. By increasing the input partial pressure of HCl, the pressure of MgCl2 is increased, which agrees well with recently reported experiments. From these results, it is concluded that MgCl2 is the key molecule which plays the most important role for Mg-doping in fabricating p-type GaN using HVPE with MgO.

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Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

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