Thermodynamic analysis of AlGaN HVPE growth

Akinori Koukitu; Jun Kikuchi; Yoshihiro Kangawa; Yoshinao Kumagai

doi:10.1016/j.jcrysgro.2005.03.010

Thermodynamic analysis of AlGaN HVPE growth

Akinori Koukitu
, Jun Kikuchi
, Yoshihiro Kangawa
, Yoshinao Kumagai

Research output: Contribution to journal › Conference article › peer-review

36 Citations (Scopus)

Abstract

A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl₃ and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).

Original language	English
Pages (from-to)	47-54
Number of pages	8
Journal	Journal of Crystal Growth
Volume	281
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.03.010
Publication status	Published - Jul 15 2005
Externally published	Yes
Event	The Internbational Workshop on Bulk Nitride Semiconductors III - Duration: Sept 4 2004 → Sept 9 2004

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.03.010

Cite this

@article{04b4136c2ab745fdaeec06444e080165,

title = "Thermodynamic analysis of AlGaN HVPE growth",

abstract = "A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10\% hydrogen in carrier gas).",

author = "Akinori Koukitu and Jun Kikuchi and Yoshihiro Kangawa and Yoshinao Kumagai",

note = "Funding Information: This work was carried out under the 21st Century Center of Excellence (COE) program of the Future Nano-Materials Research and Education Project, which is financially supported by the Ministry of Education, Science, Sports, Culture and Technology, at Tokyo University of Agriculture \& Technology, and was partially supported by a Grant-in-Aid for Science Research (No. 15360004) from the Ministry of Education, Science, Sports, Culture and Technology.; The Internbational Workshop on Bulk Nitride Semiconductors III ; Conference date: 04-09-2004 Through 09-09-2004",

year = "2005",

month = jul,

day = "15",

doi = "10.1016/j.jcrysgro.2005.03.010",

language = "English",

volume = "281",

pages = "47--54",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - Thermodynamic analysis of AlGaN HVPE growth

AU - Koukitu, Akinori

AU - Kikuchi, Jun

AU - Kangawa, Yoshihiro

AU - Kumagai, Yoshinao

N1 - Funding Information: This work was carried out under the 21st Century Center of Excellence (COE) program of the Future Nano-Materials Research and Education Project, which is financially supported by the Ministry of Education, Science, Sports, Culture and Technology, at Tokyo University of Agriculture & Technology, and was partially supported by a Grant-in-Aid for Science Research (No. 15360004) from the Ministry of Education, Science, Sports, Culture and Technology.

PY - 2005/7/15

Y1 - 2005/7/15

N2 - A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).

AB - A thermodynamic analysis of the hydride vapor phase epitaxy (HVPE) of AlGaN using AlCl3 and GaCl as group III precursors is described. For a range of values on the input ratio, temperature, and the partial pressure of hydrogen in the carrier gas, we calculated the equilibrium partial pressures and the driving force for AlN and GaN deposition in AlGaN. As a result, we show that controllable AlGaN HVPE is possible under a low partial pressure of hydrogen (<10% hydrogen in carrier gas).

UR - https://www.scopus.com/pages/publications/20744455260

UR - https://www.scopus.com/pages/publications/20744455260#tab=citedBy

U2 - 10.1016/j.jcrysgro.2005.03.010

DO - 10.1016/j.jcrysgro.2005.03.010

M3 - Conference article

AN - SCOPUS:20744455260

SN - 0022-0248

VL - 281

SP - 47

EP - 54

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - The Internbational Workshop on Bulk Nitride Semiconductors III

Y2 - 4 September 2004 through 9 September 2004

ER -

Thermodynamic analysis of AlGaN HVPE growth

Abstract

All Science Journal Classification (ASJC) codes

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