TY - JOUR
T1 - Thermally stable SnO2 nanocrystals
T2 - Synthesis and application to gas sensors
AU - Yuasa, Masayoshi
AU - Suematsu, Koichi
AU - Yamada, Kiyomi
AU - Watanabe, Ken
AU - Kida, Tetsuya
AU - Yamazoe, Noboru
AU - Shimanoe, Kengo
N1 - Funding Information:
This work was partially supported by Grant-in-Aid for Scientific Research (B) (22350064) from the Japan Society for the Promotion of Science (JSPS).
Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/8/3
Y1 - 2016/8/3
N2 - In this study, we prepared thermally stable SnO2 nanocrystals (ca. 4 nm) in a mixture of SnCl4, tetraethylene glycol (TEG), and tetrabutylammonium hydroxide (TBAH) under reflux and obtained a highly sensitive semiconductor gas sensor. It has been determined both theoretically and experimentally that the synthesis of oxide semiconductor nanoparticles is an important factor in highly sensitive semiconductor gas sensors. However, as-synthesized nanocrystals generally grow large during calcination at high temperature, and this thermal crystal growth reduces the sensor response. Therefore, to refine the response of the semiconductor gas sensor, we synthesized thermally stable SnO2 nanocrystals by heating under reflux a SnCl4-TBAH-TEG mixture. The obtained SnO2 nanocrystals exhibited high thermal stability even when calcined at a temperature up to 600 °C. The gas-sensing films fabricated from the thermally stable SnO2 nanocrystals exhibited a high sensor response to hydrogen due to their small crystal size, and a change in their surface property as compared with conventional SnO2 nanocrystals synthesized via hydrothermal treatment.
AB - In this study, we prepared thermally stable SnO2 nanocrystals (ca. 4 nm) in a mixture of SnCl4, tetraethylene glycol (TEG), and tetrabutylammonium hydroxide (TBAH) under reflux and obtained a highly sensitive semiconductor gas sensor. It has been determined both theoretically and experimentally that the synthesis of oxide semiconductor nanoparticles is an important factor in highly sensitive semiconductor gas sensors. However, as-synthesized nanocrystals generally grow large during calcination at high temperature, and this thermal crystal growth reduces the sensor response. Therefore, to refine the response of the semiconductor gas sensor, we synthesized thermally stable SnO2 nanocrystals by heating under reflux a SnCl4-TBAH-TEG mixture. The obtained SnO2 nanocrystals exhibited high thermal stability even when calcined at a temperature up to 600 °C. The gas-sensing films fabricated from the thermally stable SnO2 nanocrystals exhibited a high sensor response to hydrogen due to their small crystal size, and a change in their surface property as compared with conventional SnO2 nanocrystals synthesized via hydrothermal treatment.
UR - http://www.scopus.com/inward/record.url?scp=84982671664&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84982671664&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.6b00087
DO - 10.1021/acs.cgd.6b00087
M3 - Article
AN - SCOPUS:84982671664
SN - 1528-7483
VL - 16
SP - 4203
EP - 4208
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 8
ER -