Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	33-34
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2020.a-4-02
Publication status	Published - Sept 29 2020
Event	2020 International Conference on Solid State Devices and Materials (SSDM2020) - All-Virtual, All-Virtual, Japan Duration: Sept 27 2020 → Sept 30 2020

Conference	2020 International Conference on Solid State Devices and Materials (SSDM2020)
Country/Territory	Japan
City	All-Virtual
Period	9/27/20 → 9/30/20

Access to Document

Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities. / Kanakogi, Hiroki; Wen, Wei-Chen; Yamamoto, Keisuke et al.
2020. 33-34 Paper presented at 2020 International Conference on Solid State Devices and Materials (SSDM2020), All-Virtual, Japan.

Research output: Contribution to conference › Paper › peer-review

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title = "Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities",

author = "Hiroki Kanakogi and Wei-Chen Wen and Keisuke Yamamoto and Dong Wang and Hiroshi Nakashima",

year = "2020",

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AU - Kanakogi, Hiroki

AU - Wen, Wei-Chen

AU - Yamamoto, Keisuke

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2020/9/29

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T2 - 2020 International Conference on Solid State Devices and Materials (SSDM2020)

Y2 - 27 September 2020 through 30 September 2020

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