Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

Hiroki Kanakogi, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	33-34
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2020.a-4-02
Publication status	Published - Sept 29 2020
Event	2020 International Conference on Solid State Devices and Materials (SSDM2020) - All-Virtual, All-Virtual, Japan Duration: Sept 27 2020 → Sept 30 2020

Conference	2020 International Conference on Solid State Devices and Materials (SSDM2020)
Country/Territory	Japan
City	All-Virtual
Period	9/27/20 → 9/30/20

Access to Document

Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities. / Kanakogi, Hiroki; Wen, Wei-Chen; Yamamoto, Keisuke et al.
2020. 33-34 Paper presented at 2020 International Conference on Solid State Devices and Materials (SSDM2020), All-Virtual, Japan.

Research output: Contribution to conference › Paper › peer-review

@conference{537ebe2dcefa433fb251793dea3c485f,

title = "Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities",

author = "Hiroki Kanakogi and Wei-Chen Wen and Keisuke Yamamoto and Dong Wang and Hiroshi Nakashima",

year = "2020",

month = sep,

day = "29",

doi = "10.7567/ssdm.2020.a-4-02",

language = "English",

pages = "33--34",

note = "2020 International Conference on Solid State Devices and Materials (SSDM2020) ; Conference date: 27-09-2020 Through 30-09-2020",

}

TY - CONF

T1 - Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities

AU - Kanakogi, Hiroki

AU - Wen, Wei-Chen

AU - Yamamoto, Keisuke

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2020/9/29

Y1 - 2020/9/29

U2 - 10.7567/ssdm.2020.a-4-02

DO - 10.7567/ssdm.2020.a-4-02

M3 - Paper

SP - 33

EP - 34

T2 - 2020 International Conference on Solid State Devices and Materials (SSDM2020)

Y2 - 27 September 2020 through 30 September 2020

ER -