Thermal Oxidation of GaP

Y. Kato, K. M. Geib, R. G. Gann, P. R. Brusenback, C. W. Wilmsen

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6 Citations (Scopus)


The surface topography and interface structure after thermal oxidation of GaP is reported for the temperature range 600 to 1220 °C. An extensive network of interfacial voids was observed in the substrate under the oxide film. The size of the voids was enlarged by a bulging of the oxide, probably as a result of pressure within the voids but also from a difference in the coefficients of expansion which also caused cracks in the oxide film. The voids begin as isolated cavities but coalesce into winding caverns after further oxidation or with increased temperature. The oxide begins to grow a significant thickness of oxide at approximately 650 °C in dry oxygen. In steam the oxidation rate is approximately ten times faster and there are no interfacial voids even after 2 μ of oxide growth.

Original languageEnglish
Pages (from-to)588-592
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
Publication statusPublished - Apr 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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