The temperature dependence of cross-plane thermal conductivity of Indium-Gallium-Zinc-Oxide (IGZO) thin film was measured using a differential three-omega method. The IGZO thin films were deposited on Al2O3 substrate by DC sputtering in room temperature. The thermal conductivities were observed to be 1.6, 1.8 and 2.6 W/(m·K) at some different oxygen partial pressures, 0%, 10%, and 65%, respectively. Furthermore, the thermal conductivity of IGZO thin film is decreasing with increasing the measurement ambient temperature according to the crystalline material typical characteristics. These results notify that a crystallinity exists inside the IGZO films and this crystalline phase governs the heat conduction into IGZO films.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2020|
|Event||57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online|
Duration: Aug 3 2020 → Aug 7 2020
All Science Journal Classification (ASJC) codes