Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito; Ichiro Omura; Tsuneo Ogura; Hiromichi Ohashi

doi:10.1016/j.sse.2003.10.003

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito, Ichiro Omura, Tsuneo Ogura, Hiromichi Ohashi

Research output: Contribution to journal › Article › peer-review

142 Citations (Scopus)

Abstract

The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes ultra-low on-resistance due to a very short gate-drain offset, and a power integration circuit with very high power can be easily realized even with a small chip. The lateral WBS devices with breakdown voltage of over 1 kV realized on-resistance below 1 mΩcm². For the breakdown voltage of over 10 kV, diamond devices are attractive due to the large critical field (5.6 MV/cm). Although the WBS device realizes drastic reduction of both the chip area and the power loss, the heat dissipation technique and high current density switching capability are also important for bringing out the potential of the WBS device.

Original language	English
Pages (from-to)	1555-1562
Number of pages	8
Journal	Solid-State Electronics
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2003.10.003
Publication status	Published - Sept 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2003.10.003

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title = "Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device",

abstract = "The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes ultra-low on-resistance due to a very short gate-drain offset, and a power integration circuit with very high power can be easily realized even with a small chip. The lateral WBS devices with breakdown voltage of over 1 kV realized on-resistance below 1 mΩcm2. For the breakdown voltage of over 10 kV, diamond devices are attractive due to the large critical field (5.6 MV/cm). Although the WBS device realizes drastic reduction of both the chip area and the power loss, the heat dissipation technique and high current density switching capability are also important for bringing out the potential of the WBS device.",

author = "Wataru Saito and Ichiro Omura and Tsuneo Ogura and Hiromichi Ohashi",

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T1 - Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

AU - Saito, Wataru

AU - Omura, Ichiro

AU - Ogura, Tsuneo

AU - Ohashi, Hiromichi

PY - 2004/9

Y1 - 2004/9

N2 - The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes ultra-low on-resistance due to a very short gate-drain offset, and a power integration circuit with very high power can be easily realized even with a small chip. The lateral WBS devices with breakdown voltage of over 1 kV realized on-resistance below 1 mΩcm2. For the breakdown voltage of over 10 kV, diamond devices are attractive due to the large critical field (5.6 MV/cm). Although the WBS device realizes drastic reduction of both the chip area and the power loss, the heat dissipation technique and high current density switching capability are also important for bringing out the potential of the WBS device.

AB - The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes ultra-low on-resistance due to a very short gate-drain offset, and a power integration circuit with very high power can be easily realized even with a small chip. The lateral WBS devices with breakdown voltage of over 1 kV realized on-resistance below 1 mΩcm2. For the breakdown voltage of over 10 kV, diamond devices are attractive due to the large critical field (5.6 MV/cm). Although the WBS device realizes drastic reduction of both the chip area and the power loss, the heat dissipation technique and high current density switching capability are also important for bringing out the potential of the WBS device.

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JO - Solid-State Electronics

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Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Abstract

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