Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito, Ichiro Omura, Tsuneo Ogura, Hiromichi Ohashi

Research output: Contribution to journalArticlepeer-review

142 Citations (Scopus)


The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes ultra-low on-resistance due to a very short gate-drain offset, and a power integration circuit with very high power can be easily realized even with a small chip. The lateral WBS devices with breakdown voltage of over 1 kV realized on-resistance below 1 mΩcm2. For the breakdown voltage of over 10 kV, diamond devices are attractive due to the large critical field (5.6 MV/cm). Although the WBS device realizes drastic reduction of both the chip area and the power loss, the heat dissipation technique and high current density switching capability are also important for bringing out the potential of the WBS device.

Original languageEnglish
Pages (from-to)1555-1562
Number of pages8
JournalSolid-State Electronics
Issue number9
Publication statusPublished - Sept 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device'. Together they form a unique fingerprint.

Cite this