Abstract
Stability of ferroelectric phase and its thickness-dependence were theoretically investigated by incorporating the semiconductor properties of ferroelectrics into the Ginzburg-Landau (GL) theory, which successfully explained experimental results for ferroelectric oxides, e.g., BaTiO3. An expression of the GL energy of a ferroelectric in a complex structure was derived. Using the energy, the semiconductivity was found to suppress the instability more effectively than the inhomogeneity (▽P)- and multidomain-effects.
| Original language | English |
|---|---|
| Pages (from-to) | 610-615 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 130-132 |
| DOIs | |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: Oct 27 1997 → Oct 30 1997 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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