Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen

Yuriko Matsuo, Yoshihiro Kangawa, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We investigate the desorption of As from GaAs(001) surfaces under an atmosphere of hydrogen using the ab initio pseudopotential method. The GaAs surface is (2 × 4) reconstructed with arsenic-monohydrogen bonds, arsenic-dihydrogen bonds, and Ga-Ga dimer bonds. We propose a mechanism for As desorption from the (001) surface in the presence of ambient hydrogen. The calculated activation energy is close to the experimental value for the (1 × 1) to (2 × 4) transition according to an in situ gravimetric (GM) method.

Original languageEnglish
Pages (from-to)2578-2581
Number of pages4
JournalJapanese Journal of Applied Physics
Volume42
Issue number5 A
DOIs
Publication statusPublished - May 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy

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