Theoretical approach to influence of As2 pressure on GaAs growth kinetics

Y. Kangawa; T. Ito; Y. S. Hiraoka; A. Taguchi; K. Shiraishi; T. Ohachi

doi:10.1016/S0039-6028(02)01259-1

Theoretical approach to influence of As₂ pressure on GaAs growth kinetics

Y. Kangawa, T. Ito, Y. S. Hiraoka, A. Taguchi, K. Shiraishi, T. Ohachi

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73 Citations (Scopus)

Abstract

The newly developed first-principles calculation based computational method incorporating chemical potential of As₂ gas is applied to understand the influence of As₂ pressure on GaAs growth kinetics under the molecular beam epitaxy growth conditions with high As₂ pressures where the c(4 × 4) reconstructed structure appears on the surface. The calculated results suggest that the chemical potential of As₂ gas increases with As₂ pressure, which suppresses As₂ (As-dimer) desorption or extends As₂ surface lifetime. This induces the decrease of GaAs growth rate, because GaAs layer-by-layer growth does not proceed without As₂ desorption on the As-rich c( 4× 4) surface.

Original language	English
Pages (from-to)	285-289
Number of pages	5
Journal	Surface Science
Volume	507-510
DOIs	https://doi.org/10.1016/S0039-6028(02)01259-1
Publication status	Published - Jun 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(02)01259-1

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title = "Theoretical approach to influence of As2 pressure on GaAs growth kinetics",

abstract = "The newly developed first-principles calculation based computational method incorporating chemical potential of As2 gas is applied to understand the influence of As2 pressure on GaAs growth kinetics under the molecular beam epitaxy growth conditions with high As2 pressures where the c(4 × 4) reconstructed structure appears on the surface. The calculated results suggest that the chemical potential of As2 gas increases with As2 pressure, which suppresses As2 (As-dimer) desorption or extends As2 surface lifetime. This induces the decrease of GaAs growth rate, because GaAs layer-by-layer growth does not proceed without As2 desorption on the As-rich c( 4× 4) surface.",

author = "Y. Kangawa and T. Ito and Hiraoka, {Y. S.} and A. Taguchi and K. Shiraishi and T. Ohachi",

note = "Funding Information: This work was partly supported by JSPS research for the future programs in the area of atomic scale surface and interface dynamics. ",

year = "2002",

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doi = "10.1016/S0039-6028(02)01259-1",

language = "English",

volume = "507-510",

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journal = "Surface Science",

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TY - JOUR

T1 - Theoretical approach to influence of As2 pressure on GaAs growth kinetics

AU - Kangawa, Y.

AU - Ito, T.

AU - Hiraoka, Y. S.

AU - Taguchi, A.

AU - Shiraishi, K.

AU - Ohachi, T.

N1 - Funding Information: This work was partly supported by JSPS research for the future programs in the area of atomic scale surface and interface dynamics.

PY - 2002/6

Y1 - 2002/6

N2 - The newly developed first-principles calculation based computational method incorporating chemical potential of As2 gas is applied to understand the influence of As2 pressure on GaAs growth kinetics under the molecular beam epitaxy growth conditions with high As2 pressures where the c(4 × 4) reconstructed structure appears on the surface. The calculated results suggest that the chemical potential of As2 gas increases with As2 pressure, which suppresses As2 (As-dimer) desorption or extends As2 surface lifetime. This induces the decrease of GaAs growth rate, because GaAs layer-by-layer growth does not proceed without As2 desorption on the As-rich c( 4× 4) surface.

AB - The newly developed first-principles calculation based computational method incorporating chemical potential of As2 gas is applied to understand the influence of As2 pressure on GaAs growth kinetics under the molecular beam epitaxy growth conditions with high As2 pressures where the c(4 × 4) reconstructed structure appears on the surface. The calculated results suggest that the chemical potential of As2 gas increases with As2 pressure, which suppresses As2 (As-dimer) desorption or extends As2 surface lifetime. This induces the decrease of GaAs growth rate, because GaAs layer-by-layer growth does not proceed without As2 desorption on the As-rich c( 4× 4) surface.

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U2 - 10.1016/S0039-6028(02)01259-1

DO - 10.1016/S0039-6028(02)01259-1

M3 - Article

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SN - 0039-6028

VL - 507-510

SP - 285

EP - 289

JO - Surface Science

JF - Surface Science

ER -

Theoretical approach to influence of As₂ pressure on GaAs growth kinetics

Abstract

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