TY - JOUR
T1 - Theoretical analysis of band alignment at back junction in Sn–Ge perovskite solar cells with inverted p-i-n structure
AU - Minemoto, Takashi
AU - Kawano, Yu
AU - Nishimura, Takahito
AU - Shen, Qing
AU - Yoshino, Kenji
AU - Iikubo, Satoshi
AU - Hayase, Shuzi
AU - Chantana, Jakapan
N1 - Funding Information:
The author would like to thank Professor Marc Burgelman, Department of Electronics and Information Systems, University of Gent for the development of the SCAPS software package and allowing its use. The authors acknowledge JST Mirai program for financial support.
Funding Information:
The author would like to thank Professor Marc Burgelman, Department of Electronics and Information Systems, University of Gent for the development of the SCAPS software package and allowing its use. The authors acknowledge JST Mirai program for financial support. Appendix A
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/3
Y1 - 2020/3
N2 - Pb-free perovskite solar cells are investigated to eliminate the toxic Pb. However, the Pb-free perovskite solar cell with power conversion efficiency (PCE) of below 9% has been reported mainly because of low open circuit voltage (VOC). In this contribution, the theoretical analysis of the Pb-free perovskite solar cells with an inverted p-i-n planar structure, where the perovskite is FA0.75MA0.25Sn0.95Ge0.05I3 (Sn–Ge perovskite), was therefore conducted using device simulation. It is disclosed that VOC is positively affected by built-in potential across the perovskite absorber (Vbi). The Vbi is primarily governed by conduction band minimum (EC) of electron transporting layer (ETL) and/or work function of back contact (Φ_BC), where they should not be deeper (lower) than the EC (−3.67 eV) of the Sn–Ge perovskite absorber to avoid the Vbi loss for high VOC. Consequently, the ETL and BC materials in the Sn–Ge perovskite solar cells should be appropriately chosen for both suitable conduction band offset of perovskite and ETL, as well as the difference of the EC of perovskite and Φ_BC, thus developing the device structure and increasing Vbi and VOC for the improved PCE.
AB - Pb-free perovskite solar cells are investigated to eliminate the toxic Pb. However, the Pb-free perovskite solar cell with power conversion efficiency (PCE) of below 9% has been reported mainly because of low open circuit voltage (VOC). In this contribution, the theoretical analysis of the Pb-free perovskite solar cells with an inverted p-i-n planar structure, where the perovskite is FA0.75MA0.25Sn0.95Ge0.05I3 (Sn–Ge perovskite), was therefore conducted using device simulation. It is disclosed that VOC is positively affected by built-in potential across the perovskite absorber (Vbi). The Vbi is primarily governed by conduction band minimum (EC) of electron transporting layer (ETL) and/or work function of back contact (Φ_BC), where they should not be deeper (lower) than the EC (−3.67 eV) of the Sn–Ge perovskite absorber to avoid the Vbi loss for high VOC. Consequently, the ETL and BC materials in the Sn–Ge perovskite solar cells should be appropriately chosen for both suitable conduction band offset of perovskite and ETL, as well as the difference of the EC of perovskite and Φ_BC, thus developing the device structure and increasing Vbi and VOC for the improved PCE.
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U2 - 10.1016/j.solmat.2019.110268
DO - 10.1016/j.solmat.2019.110268
M3 - Article
AN - SCOPUS:85074299790
SN - 0927-0248
VL - 206
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
M1 - 110268
ER -
