The temperature dependence of Hall mobility of the oxide thin film In ₂O₃-ZnO

We report that temperature dependence of Hall mobility of the strongly disordered films In₂O₃-ZnO. We made targets by mixing ZnO into In₂O₃ at the ratio 0.5 ∼ 2 wt%. Sputtering those targets on glass substrate by DC magnetron method, amorphous films with 25 nm thickness were obtained. By annealing at T = 150 ∼ 350 ^OC in the air, oxygen defect decreased and the conductance decreased. We obtained films with conductivity 0.2mS/m ∼ 300S/m. In the temperature range T = 90∼300K, we measured the Hall effect of these films. The density of electron was 4 × 10¹⁸ ∼ 1.2 × 10²² m^-3 at the room temperature. The Hall mobility μ_H shows the thermal-activation-like temperature dependence μ_H = AT ^-1/2 exp(E_B/k_BT), where E_B is activation energy. By fitting, we obtained E_B = 60 ∼ 86 meV.