TY - JOUR
T1 - The roles of ambient oxygen and substrate temperature on growth of diamond thin films by pulsed laser deposition
AU - Yoshitake, Tsuyoshi
AU - Nishiyama, Takashi
AU - Hara, Takeshi
AU - Nagayama, Kunihito
PY - 2002/3/20
Y1 - 2002/3/20
N2 - Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5×10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.
AB - Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5×10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.
UR - http://www.scopus.com/inward/record.url?scp=0037139079&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037139079&partnerID=8YFLogxK
U2 - 10.1142/s0217979202010452
DO - 10.1142/s0217979202010452
M3 - Article
AN - SCOPUS:0037139079
SN - 0217-9792
VL - 16
SP - 825
EP - 829
JO - International Journal of Modern Physics B
JF - International Journal of Modern Physics B
IS - 6-7
ER -