The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors

Changyong Lan, Xiaolin Kang, You Meng, Renjie Wei, Xiuming Bu, Sen Po Yip, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Due to the ultra-thin nature and moderate carrier mobility, semiconducting two-dimensional (2D) materials have attracted extensive attention for next-generation electronics. However, the gate bias stress instability and hysteresis are always observed in these 2D materials-based transistors that significantly degrade their reliability for practical applications. Herein, the origin of gate bias stress instability and hysteresis for chemical vapor deposited monolayer WS2 transistors are investigated carefully. The transistor performance is found to be strongly affected by the gate bias stress time, sweeping rate and range, and temperature. Based on the systematical study and complementary analysis, charge trapping is determined to be the major contribution for these observed phenomena. Importantly, due to these charge trapping effects, the channel current is observed to decrease with time; hence, a rate equation, considering the charge trapping and time decay effect of current, is proposed and developed to model the phenomena with excellent consistency with experimental data. All these results do not only indicate the validity of the charge trapping model, but also confirm the hysteresis being indeed caused by charge trapping. Evidently, this simple model provides a sufficient explanation for the charge trapping induced gate bias stress instability and hysteresis in monolayer WS2 transistors, which can be also applicable to other kinds of transistors. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)3278-3285
Number of pages8
JournalNano Research
Issue number12
Publication statusPublished - Dec 1 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering


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