TY - JOUR
T1 - The mixed oxide A12O3V2O5 as a semiconductor gas sensor for NO and NO2
AU - Ishihara, Tatsumi
AU - Shiokawa, Kazuhiko
AU - Eguchi, Koichi
AU - Arai, Hiromichi
PY - 1989/9/1
Y1 - 1989/9/1
N2 - Several semiconductive oxides are tested as sensors for the detection of NO, NO2, CO and CO2. The conductivity of Al2O3V2O5 is sensitive to 1-1000 ppm of NO and NO2, but is insensitive to CO or CO2. The mixed oxide (Al2O3)0.5(V2O5)0.5 is excellent not only in its selectivity for detection of NO and NO2 but also in its sensitivity. The amount of NO adsorbed is greatly enhanced, but that of CO is unaffected by mixing V2O5 with Al2O3. The high sensitivity of Al2O3V2O5 to NO and NO2 appears to result from the increased amount of adsorbed nitrogen oxide.
AB - Several semiconductive oxides are tested as sensors for the detection of NO, NO2, CO and CO2. The conductivity of Al2O3V2O5 is sensitive to 1-1000 ppm of NO and NO2, but is insensitive to CO or CO2. The mixed oxide (Al2O3)0.5(V2O5)0.5 is excellent not only in its selectivity for detection of NO and NO2 but also in its sensitivity. The amount of NO adsorbed is greatly enhanced, but that of CO is unaffected by mixing V2O5 with Al2O3. The high sensitivity of Al2O3V2O5 to NO and NO2 appears to result from the increased amount of adsorbed nitrogen oxide.
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U2 - 10.1016/0250-6874(89)87078-7
DO - 10.1016/0250-6874(89)87078-7
M3 - Letter
AN - SCOPUS:0024735531
SN - 0250-6874
VL - 19
SP - 259
EP - 265
JO - Sensors and Actuators
JF - Sensors and Actuators
IS - 3
ER -